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Title: Methods for fabricating thin film III-V compound solar cell

Abstract

The present invention utilizes epitaxial lift-off in which a sacrificial layer is included in the epitaxial growth between the substrate and a thin film III-V compound solar cell. To provide support for the thin film III-V compound solar cell in absence of the substrate, a backing layer is applied to a surface of the thin film III-V compound solar cell before it is separated from the substrate. To separate the thin film III-V compound solar cell from the substrate, the sacrificial layer is removed as part of the epitaxial lift-off. Once the substrate is separated from the thin film III-V compound solar cell, the substrate may then be reused in the formation of another thin film III-V compound solar cell.

Inventors:
; ; ; ; ; ;
Issue Date:
Research Org.:
MicroLink Devices, Inc., Niles, IL (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1176431
Patent Number(s):
7994419
Application Number:
12/167,583
Assignee:
MicroLink Devices, Inc. (Niles, IL)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
Resource Type:
Patent
Resource Relation:
Patent File Date: 2008 Jul 03
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Pan, Noren, Hillier, Glen, Vu, Duy Phach, Tatavarti, Rao, Youtsey, Christopher, McCallum, David, and Martin, Genevieve. Methods for fabricating thin film III-V compound solar cell. United States: N. p., 2011. Web.
Pan, Noren, Hillier, Glen, Vu, Duy Phach, Tatavarti, Rao, Youtsey, Christopher, McCallum, David, & Martin, Genevieve. Methods for fabricating thin film III-V compound solar cell. United States.
Pan, Noren, Hillier, Glen, Vu, Duy Phach, Tatavarti, Rao, Youtsey, Christopher, McCallum, David, and Martin, Genevieve. Tue . "Methods for fabricating thin film III-V compound solar cell". United States. https://www.osti.gov/servlets/purl/1176431.
@article{osti_1176431,
title = {Methods for fabricating thin film III-V compound solar cell},
author = {Pan, Noren and Hillier, Glen and Vu, Duy Phach and Tatavarti, Rao and Youtsey, Christopher and McCallum, David and Martin, Genevieve},
abstractNote = {The present invention utilizes epitaxial lift-off in which a sacrificial layer is included in the epitaxial growth between the substrate and a thin film III-V compound solar cell. To provide support for the thin film III-V compound solar cell in absence of the substrate, a backing layer is applied to a surface of the thin film III-V compound solar cell before it is separated from the substrate. To separate the thin film III-V compound solar cell from the substrate, the sacrificial layer is removed as part of the epitaxial lift-off. Once the substrate is separated from the thin film III-V compound solar cell, the substrate may then be reused in the formation of another thin film III-V compound solar cell.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Aug 09 00:00:00 EDT 2011},
month = {Tue Aug 09 00:00:00 EDT 2011}
}

Works referenced in this record:

Paper-Thin InGaP/ GaAs Solar Cells
conference, May 2006


Direct-bonded GaAs∕InGaAs tandem solar cell
journal, September 2006


Future technology pathways of terrestrial III–V multijunction solar cells for concentrator photovoltaic systems
journal, August 2010


Epitaxial lift-off GaAs solar cell from a reusable GaAs substrate
journal, March 1997


High-efficiency GaInP∕GaAs∕InGaAs triple-junction solar cells grown inverted with a metamorphic bottom junction
journal, July 2007


High rate epitaxial lift-off of InGaP films from GaAs substrates
journal, April 2000


Epitaxial Lift-Off for large area thin film III/V devices
journal, March 2005


InGaAs/InP double heterostructures on InP/Si templates fabricated by wafer bonding and hydrogen-induced exfoliation
journal, December 2003