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Title: Selective etching of silicon carbide films

Abstract

A method of etching silicon carbide using a nonmetallic mask layer. The method includes providing a silicon carbide substrate; forming a non-metallic mask layer by applying a layer of material on the substrate; patterning the mask layer to expose underlying areas of the substrate; and etching the underlying areas of the substrate with a plasma at a first rate, while etching the mask layer at a rate lower than the first rate.

Inventors:
; ;
Issue Date:
Research Org.:
Sandia National Lab. (SNL-CA), Livermore, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1176038
Patent Number(s):
7151277
Application Number:
10/613,508
Assignee:
The Regents of the University of California (Oakland, CA)
Patent Classifications (CPCs):
B - PERFORMING OPERATIONS B81 - MICROSTRUCTURAL TECHNOLOGY B81C - PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
9782
Resource Type:
Patent
Resource Relation:
Patent File Date: 2003 Jul 03
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Gao, Di, Howe, Roger T., and Maboudian, Roya. Selective etching of silicon carbide films. United States: N. p., 2006. Web.
Gao, Di, Howe, Roger T., & Maboudian, Roya. Selective etching of silicon carbide films. United States.
Gao, Di, Howe, Roger T., and Maboudian, Roya. Tue . "Selective etching of silicon carbide films". United States. https://www.osti.gov/servlets/purl/1176038.
@article{osti_1176038,
title = {Selective etching of silicon carbide films},
author = {Gao, Di and Howe, Roger T. and Maboudian, Roya},
abstractNote = {A method of etching silicon carbide using a nonmetallic mask layer. The method includes providing a silicon carbide substrate; forming a non-metallic mask layer by applying a layer of material on the substrate; patterning the mask layer to expose underlying areas of the substrate; and etching the underlying areas of the substrate with a plasma at a first rate, while etching the mask layer at a rate lower than the first rate.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Dec 19 00:00:00 EST 2006},
month = {Tue Dec 19 00:00:00 EST 2006}
}

Works referenced in this record:

Micromechanical properties of silicon-carbide thin films deposited using single-source chemical-vapor deposition
journal, July 2001


Simulations and experiments of etching of silicon in HBr plasmas for high aspect ratio features
journal, January 2002

  • Hwang, Helen H.; Meyyappan, M.; Mathad, G. S.
  • Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 20, Issue 6
  • https://doi.org/10.1116/1.1513621

Operation of α(6H)-SiC pressure sensor at 500 °C
journal, April 1998


Evaluation of MEMS materials of construction for implantable medical devices
journal, July 2002


Simultaneous etching of polysilicon materials with different doping types by low-damage transformer-coupled plasma technique
journal, September 2002


Transformer coupled plasma dielectric etch for 0.25 μm technologies
journal, January 2000


Silicon carbide micro-reaction-sintering using micromachined silicon molds
journal, March 2001


High-Pressure Bipropellant Microrocket Engine
journal, July 2001


High rate etching of SiC using inductively coupled plasma reactive ion etching in SF6-based gas mixtures
journal, October 1999


Ultradeep, low-damage dry etching of SiC
journal, February 2000


Chemical contribution of oxygen to silicon carbide plasma etching kinetics in a distributed electron cyclotron resonance (DECR) reactor
journal, March 1999


Silicon carbide as a new MEMS technology
journal, May 2000


A low-temperature CVD process for silicon carbide MEMS
journal, April 2002


A Review of SiC Reactive Ion Etching in Fluorinated Plasmas
journal, July 1997


Etching of 3C-SiC using CHF[sub 3]/O[sub 2] and CHF[sub 3]/O[sub 2]/He plasmas at 1.75 Torr
journal, March 1998


Silicon carbide for microelectromechanical systems
journal, March 2000


Angle etch control for silicon carbide power devices
journal, July 1996


Deep reactive ion etching of silicon carbide
journal, January 2001

  • Tanaka, S.; Rajanna, K.; Abe, T.
  • Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 19, Issue 6
  • https://doi.org/10.1116/1.1418401

High-selectivity etching of polycrystalline 3C-SiC films using HBr-based transformer coupled plasma
journal, March 2003