Method and apparatus for inspecting an EUV mask blank
Abstract
An apparatus and method for at-wavelength EUV mask-blank characterization for inspection of moderate and low spatial frequency coating uniformity using a synchrotron or other source of EUV light. The apparatus provides for rapid, non-destruction, non-contact, at-wavelength qualification of large mask areas, and can be self-calibrating or be calibrated to well-characterized reference samples. It can further check for spatial variation of mask reflectivity or for global differences among masks. The apparatus and method is particularly suited for inspection of coating uniformity and quality and can detect defects in the order of 50 .mu.m and above.
- Inventors:
- Issue Date:
- Research Org.:
- Univ. of California, Oakland, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1175545
- Patent Number(s):
- 6963395
- Application Number:
- 09/902,502
- Assignee:
- The Regents of the University of California (Oakland, CA)
- Patent Classifications (CPCs):
-
G - PHYSICS G03 - PHOTOGRAPHY G03F - PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC03-76SF00098
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 47 OTHER INSTRUMENTATION
Citation Formats
Goldberg, Kenneth A. Method and apparatus for inspecting an EUV mask blank. United States: N. p., 2005.
Web.
Goldberg, Kenneth A. Method and apparatus for inspecting an EUV mask blank. United States.
Goldberg, Kenneth A. Tue .
"Method and apparatus for inspecting an EUV mask blank". United States. https://www.osti.gov/servlets/purl/1175545.
@article{osti_1175545,
title = {Method and apparatus for inspecting an EUV mask blank},
author = {Goldberg, Kenneth A.},
abstractNote = {An apparatus and method for at-wavelength EUV mask-blank characterization for inspection of moderate and low spatial frequency coating uniformity using a synchrotron or other source of EUV light. The apparatus provides for rapid, non-destruction, non-contact, at-wavelength qualification of large mask areas, and can be self-calibrating or be calibrated to well-characterized reference samples. It can further check for spatial variation of mask reflectivity or for global differences among masks. The apparatus and method is particularly suited for inspection of coating uniformity and quality and can detect defects in the order of 50 .mu.m and above.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Nov 08 00:00:00 EST 2005},
month = {Tue Nov 08 00:00:00 EST 2005}
}
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