Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer
Abstract
A Group III nitride based high electron mobility transistors (HEMT) is disclosed that provides improved high frequency performance. One embodiment of the HEMT comprises a GaN buffer layer, with an Al.sub.y Ga.sub.1-y N (y=1 or y 1) layer on the GaN buffer layer. An Al.sub.x Ga.sub.1-x N (0.ltoreq.x.ltoreq.0.5) barrier layer on to the Al.sub.y Ga.sub.1-y N layer, opposite the GaN buffer layer, Al.sub.y Ga.sub.1-y N layer having a higher Al concentration than that of the Al.sub.x Ga.sub.1-x N barrier layer. A preferred Al.sub.y Ga.sub.1-y N layer has y=1 or y.about.1 and a preferred Al.sub.x Ga.sub.1-x N barrier layer has 0.ltoreq.x.ltoreq.0.5. A 2DEG forms at the interface between the GaN buffer layer and the Al.sub.y Ga.sub.1-y N layer. Respective source, drain and gate contacts are formed on the Al.sub.x Ga.sub.1-x N barrier layer. The HEMT can also comprising a substrate adjacent to the buffer layer, opposite the Al.sub.y Ga.sub.1-y N layer and a nucleation layer between the Al.sub.x Ga.sub.1-x N buffer layer and the substrate.
- Inventors:
- Issue Date:
- Research Org.:
- Oak Ridge Y-12 Plant (Y-12), Oak Ridge, TN (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1175230
- Patent Number(s):
- 6849882
- Application Number:
- 10/102,272
- Assignee:
- Cree Inc. (Goleta, CA)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC03-76SF00098
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
Citation Formats
Chavarkar, Prashant, Smorchkova, Ioulia P., Keller, Stacia, Mishra, Umesh, Walukiewicz, Wladyslaw, and Wu, Yifeng. Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer. United States: N. p., 2005.
Web.
Chavarkar, Prashant, Smorchkova, Ioulia P., Keller, Stacia, Mishra, Umesh, Walukiewicz, Wladyslaw, & Wu, Yifeng. Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer. United States.
Chavarkar, Prashant, Smorchkova, Ioulia P., Keller, Stacia, Mishra, Umesh, Walukiewicz, Wladyslaw, and Wu, Yifeng. Tue .
"Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer". United States. https://www.osti.gov/servlets/purl/1175230.
@article{osti_1175230,
title = {Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer},
author = {Chavarkar, Prashant and Smorchkova, Ioulia P. and Keller, Stacia and Mishra, Umesh and Walukiewicz, Wladyslaw and Wu, Yifeng},
abstractNote = {A Group III nitride based high electron mobility transistors (HEMT) is disclosed that provides improved high frequency performance. One embodiment of the HEMT comprises a GaN buffer layer, with an Al.sub.y Ga.sub.1-y N (y=1 or y 1) layer on the GaN buffer layer. An Al.sub.x Ga.sub.1-x N (0.ltoreq.x.ltoreq.0.5) barrier layer on to the Al.sub.y Ga.sub.1-y N layer, opposite the GaN buffer layer, Al.sub.y Ga.sub.1-y N layer having a higher Al concentration than that of the Al.sub.x Ga.sub.1-x N barrier layer. A preferred Al.sub.y Ga.sub.1-y N layer has y=1 or y.about.1 and a preferred Al.sub.x Ga.sub.1-x N barrier layer has 0.ltoreq.x.ltoreq.0.5. A 2DEG forms at the interface between the GaN buffer layer and the Al.sub.y Ga.sub.1-y N layer. Respective source, drain and gate contacts are formed on the Al.sub.x Ga.sub.1-x N barrier layer. The HEMT can also comprising a substrate adjacent to the buffer layer, opposite the Al.sub.y Ga.sub.1-y N layer and a nucleation layer between the Al.sub.x Ga.sub.1-x N buffer layer and the substrate.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Feb 01 00:00:00 EST 2005},
month = {Tue Feb 01 00:00:00 EST 2005}
}
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