Method for nanomachining high aspect ratio structures
Abstract
A nanomachining method for producing high-aspect ratio precise nanostructures. The method begins by irradiating a wafer with an energetic charged-particle beam. Next, a layer of patterning material is deposited on one side of the wafer and a layer of etch stop or metal plating base is coated on the other side of the wafer. A desired pattern is generated in the patterning material on the top surface of the irradiated wafer using conventional electron-beam lithography techniques. Lastly, the wafer is placed in an appropriate chemical solution that produces a directional etch of the wafer only in the area from which the resist has been removed by the patterning process. The high mechanical strength of the wafer materials compared to the organic resists used in conventional lithography techniques with allows the transfer of the precise patterns into structures with aspect ratios much larger than those previously achievable.
- Inventors:
- Issue Date:
- Research Org.:
- Univ. of California, Oakland, CA (United States); Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1175124
- Patent Number(s):
- 6815363
- Application Number:
- 09/927,428
- Assignee:
- The Regents of the University of California (Oakland, CA)
- Patent Classifications (CPCs):
-
B - PERFORMING OPERATIONS B81 - MICROSTRUCTURAL TECHNOLOGY B81C - PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- DOE Contract Number:
- AC03-76SF00098
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Yun, Wenbing, Spence, John, Padmore, Howard A., MacDowell, Alastair A., and Howells, Malcolm R. Method for nanomachining high aspect ratio structures. United States: N. p., 2004.
Web.
Yun, Wenbing, Spence, John, Padmore, Howard A., MacDowell, Alastair A., & Howells, Malcolm R. Method for nanomachining high aspect ratio structures. United States.
Yun, Wenbing, Spence, John, Padmore, Howard A., MacDowell, Alastair A., and Howells, Malcolm R. Tue .
"Method for nanomachining high aspect ratio structures". United States. https://www.osti.gov/servlets/purl/1175124.
@article{osti_1175124,
title = {Method for nanomachining high aspect ratio structures},
author = {Yun, Wenbing and Spence, John and Padmore, Howard A. and MacDowell, Alastair A. and Howells, Malcolm R.},
abstractNote = {A nanomachining method for producing high-aspect ratio precise nanostructures. The method begins by irradiating a wafer with an energetic charged-particle beam. Next, a layer of patterning material is deposited on one side of the wafer and a layer of etch stop or metal plating base is coated on the other side of the wafer. A desired pattern is generated in the patterning material on the top surface of the irradiated wafer using conventional electron-beam lithography techniques. Lastly, the wafer is placed in an appropriate chemical solution that produces a directional etch of the wafer only in the area from which the resist has been removed by the patterning process. The high mechanical strength of the wafer materials compared to the organic resists used in conventional lithography techniques with allows the transfer of the precise patterns into structures with aspect ratios much larger than those previously achievable.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Nov 09 00:00:00 EST 2004},
month = {Tue Nov 09 00:00:00 EST 2004}
}
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