Electrically pumped edge-emitting photonic bandgap semiconductor laser
Abstract
A highly efficient, electrically pumped edge-emitting semiconductor laser based on a one- or two-dimensional photonic bandgap (PBG) structure is described. The laser optical cavity is formed using a pair of PBG mirrors operating in the photonic band gap regime. Transverse confinement is achieved by surrounding an active semiconductor layer of high refractive index with lower-index cladding layers. The cladding layers can be electrically insulating in the passive PBG mirror and waveguide regions with a small conducting aperture for efficient channeling of the injection pump current into the active region. The active layer can comprise a quantum well structure. The quantum well structure can be relaxed in the passive regions to provide efficient extraction of laser light from the active region.
- Inventors:
- Issue Date:
- Research Org.:
- Sandia National Lab. (SNL-CA), Livermore, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1174668
- Patent Number(s):
- 6674778
- Application Number:
- 10/044,488
- Assignee:
- Sandia Corporation (Albuquerque, NM)
- Patent Classifications (CPCs):
-
B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01S - DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING
Citation Formats
Lin, Shawn-Yu, and Zubrzycki, Walter J. Electrically pumped edge-emitting photonic bandgap semiconductor laser. United States: N. p., 2004.
Web.
Lin, Shawn-Yu, & Zubrzycki, Walter J. Electrically pumped edge-emitting photonic bandgap semiconductor laser. United States.
Lin, Shawn-Yu, and Zubrzycki, Walter J. Tue .
"Electrically pumped edge-emitting photonic bandgap semiconductor laser". United States. https://www.osti.gov/servlets/purl/1174668.
@article{osti_1174668,
title = {Electrically pumped edge-emitting photonic bandgap semiconductor laser},
author = {Lin, Shawn-Yu and Zubrzycki, Walter J.},
abstractNote = {A highly efficient, electrically pumped edge-emitting semiconductor laser based on a one- or two-dimensional photonic bandgap (PBG) structure is described. The laser optical cavity is formed using a pair of PBG mirrors operating in the photonic band gap regime. Transverse confinement is achieved by surrounding an active semiconductor layer of high refractive index with lower-index cladding layers. The cladding layers can be electrically insulating in the passive PBG mirror and waveguide regions with a small conducting aperture for efficient channeling of the injection pump current into the active region. The active layer can comprise a quantum well structure. The quantum well structure can be relaxed in the passive regions to provide efficient extraction of laser light from the active region.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jan 06 00:00:00 EST 2004},
month = {Tue Jan 06 00:00:00 EST 2004}
}
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Works referenced in this record:
Stripe‐geometry quantum well heterostructure Al x Ga 1− x As‐GaAs lasers defined by defect diffusion
journal, September 1986
- Deppe, D. G.; Guido, L. J.; Holonyak, N.
- Applied Physics Letters, Vol. 49, Issue 9
Characteristics of a photonic bandgap single defect microcavity electroluminescent device
journal, January 2001
- Zhou, Wei Dong; Sabarinathan, J.; Bhattacharya, P.
- IEEE Journal of Quantum Electronics, Vol. 37, Issue 9, p. 1153-1160
Photonic-bandgap microcavities in optical waveguides
journal, November 1997
- Foresi, J. S.; Villeneuve, P. R.; Ferrera, J.
- Nature, Vol. 390, Issue 6656, p. 143-145
One-dimensional photonic bandgap microcavities for strong optical confinement in GaAs and GaAs/AlxOy semiconductor waveguides
journal, January 1999
- Ripin, D. J.; Lim, Kuo-Yi; Petrich, G. S.
- Journal of Lightwave Technology, Vol. 17, Issue 11, p. 2152-2160
Three-dimensional control of light in a two-dimensional photonic crystal slab
journal, October 2000
- Chow, Edmond; Lin, S. Y.; Johnson, S. G.
- Nature, Vol. 407, Issue 6807, p. 983-986
Photonic bandgap disk laser
journal, January 1999
- Lee, R. K.; Painter, O. J.; Kitzke, B.
- Electronics Letters, Vol. 35, Issue 7
Determination of the interdiffusion of Al and Ga in undoped (Al,Ga)As/GaAs quantum wells
journal, September 1986
- Schlesinger, T. E.; Kuech, T.
- Applied Physics Letters, Vol. 49, Issue 9
GaInNAs: a novel material for long-wavelength semiconductor lasers
journal, June 1997
- Kondow, M.; Kitatani, T.; Nakatsuka, S.
- IEEE Journal of Selected Topics in Quantum Electronics, Vol. 3, Issue 3
Two-Dimensional Photonic Band-Gap Defect Mode Laser
journal, June 1999
- Painter, O.; Lee, R. K.; Scherer, A.
- Science, Vol. 284, Issue 5421, p. 1819-1821
Electrically injected single-defect photonic bandgap surface-emitting laser at room temperature
journal, January 2000
- Zhou, W. D.; Sabarinathan, J.; Kochman, B.
- Electronics Letters, Vol. 36, Issue 18
Direct measurement of the quality factor in a two-dimensional photonic-crystal microcavity
journal, January 2001
- Lin, S. Y.; Chow, Edmond; Johnson, S. G.
- Optics Letters, Vol. 26, Issue 23