Process for manufacture of semipermeable silicon nitride membranes
Abstract
A new class of semipermeable membranes, and techniques for their fabrication, have been developed. These membranes, formed by appropriate etching of a deposited silicon nitride layer, are robust, easily manufacturable, and compatible with a wide range of silicon micromachining techniques.
- Inventors:
- Issue Date:
- Research Org.:
- Sandia National Lab. (SNL-CA), Livermore, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1174616
- Patent Number(s):
- 6660648
- Application Number:
- 09/678,418
- Assignee:
- Sandia Corporation (Albuquerque, NM)
- Patent Classifications (CPCs):
-
B - PERFORMING OPERATIONS B81 - MICROSTRUCTURAL TECHNOLOGY B81B - MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
B - PERFORMING OPERATIONS B81 - MICROSTRUCTURAL TECHNOLOGY B81C - PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
Citation Formats
Galambos, Paul Charles, Shul, Randy J., and Willison, Christi Gober. Process for manufacture of semipermeable silicon nitride membranes. United States: N. p., 2003.
Web.
Galambos, Paul Charles, Shul, Randy J., & Willison, Christi Gober. Process for manufacture of semipermeable silicon nitride membranes. United States.
Galambos, Paul Charles, Shul, Randy J., and Willison, Christi Gober. Tue .
"Process for manufacture of semipermeable silicon nitride membranes". United States. https://www.osti.gov/servlets/purl/1174616.
@article{osti_1174616,
title = {Process for manufacture of semipermeable silicon nitride membranes},
author = {Galambos, Paul Charles and Shul, Randy J. and Willison, Christi Gober},
abstractNote = {A new class of semipermeable membranes, and techniques for their fabrication, have been developed. These membranes, formed by appropriate etching of a deposited silicon nitride layer, are robust, easily manufacturable, and compatible with a wide range of silicon micromachining techniques.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Dec 09 00:00:00 EST 2003},
month = {Tue Dec 09 00:00:00 EST 2003}
}