Semiconductor material and method for enhancing solubility of a dopant therein
Abstract
A method for enhancing the equilibrium solubility of boron and indium in silicon. The method involves first-principles quantum mechanical calculations to determine the temperature dependence of the equilibrium solubility of two important p-type dopants in silicon, namely boron and indium, under various strain conditions. The equilibrium thermodynamic solubility of size-mismatched impurities, such as boron and indium in silicon, can be raised significantly if the silicon substrate is strained appropriately. For example, for boron, a 1% compressive strain raises the equilibrium solubility by 100% at 1100.degree. C.; and for indium, a 1% tensile strain at 1100.degree. C., corresponds to an enhancement of the solubility by 200%.
- Inventors:
- Issue Date:
- Research Org.:
- Univ. of California, Oakland, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1174483
- Patent Number(s):
- 6617228
- Application Number:
- 10/246,890
- Assignee:
- The Regents of the University of California (Oakland, CA)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- W-7405-ENG-48
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Citation Formats
Sadigh, Babak, Lenosky, Thomas J., Rubia, Tomas Diaz, Giles, Martin, Caturla, Maria-Jose, Ozolins, Vidvuds, Asta, Mark, Theiss, Silva, Foad, Majeed, and Quong, Andrew. Semiconductor material and method for enhancing solubility of a dopant therein. United States: N. p., 2003.
Web.
Sadigh, Babak, Lenosky, Thomas J., Rubia, Tomas Diaz, Giles, Martin, Caturla, Maria-Jose, Ozolins, Vidvuds, Asta, Mark, Theiss, Silva, Foad, Majeed, & Quong, Andrew. Semiconductor material and method for enhancing solubility of a dopant therein. United States.
Sadigh, Babak, Lenosky, Thomas J., Rubia, Tomas Diaz, Giles, Martin, Caturla, Maria-Jose, Ozolins, Vidvuds, Asta, Mark, Theiss, Silva, Foad, Majeed, and Quong, Andrew. Tue .
"Semiconductor material and method for enhancing solubility of a dopant therein". United States. https://www.osti.gov/servlets/purl/1174483.
@article{osti_1174483,
title = {Semiconductor material and method for enhancing solubility of a dopant therein},
author = {Sadigh, Babak and Lenosky, Thomas J. and Rubia, Tomas Diaz and Giles, Martin and Caturla, Maria-Jose and Ozolins, Vidvuds and Asta, Mark and Theiss, Silva and Foad, Majeed and Quong, Andrew},
abstractNote = {A method for enhancing the equilibrium solubility of boron and indium in silicon. The method involves first-principles quantum mechanical calculations to determine the temperature dependence of the equilibrium solubility of two important p-type dopants in silicon, namely boron and indium, under various strain conditions. The equilibrium thermodynamic solubility of size-mismatched impurities, such as boron and indium in silicon, can be raised significantly if the silicon substrate is strained appropriately. For example, for boron, a 1% compressive strain raises the equilibrium solubility by 100% at 1100.degree. C.; and for indium, a 1% tensile strain at 1100.degree. C., corresponds to an enhancement of the solubility by 200%.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Sep 09 00:00:00 EDT 2003},
month = {Tue Sep 09 00:00:00 EDT 2003}
}
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