Process for growing epitaxial gallium nitride and composite wafers
Abstract
A novel growth procedure to grow epitaxial Group III metal nitride thin films on lattice-mismatched substrates is proposed. Demonstrated are the quality improvement of epitaxial GaN layers using a pure metallic Ga buffer layer on c-plane sapphire substrate. X-ray rocking curve results indicate that the layers had excellent structural properties. The electron Hall mobility increases to an outstandingly high value of .mu.>400 cm.sup.2 /Vs for an electron background concentration of 4.times.10.sup.17 cm.sup.-3.
- Inventors:
- Issue Date:
- Research Org.:
- Univ. of California, Oakland, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1174323
- Patent Number(s):
- 6563144
- Application Number:
- 09/824,843
- Assignee:
- The Regents of the University of California (Oakland, CA)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC03-76F00098
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Weber, Eicke R., Subramanya, Sudhir G., Kim, Yihwan, and Kruger, Joachim. Process for growing epitaxial gallium nitride and composite wafers. United States: N. p., 2003.
Web.
Weber, Eicke R., Subramanya, Sudhir G., Kim, Yihwan, & Kruger, Joachim. Process for growing epitaxial gallium nitride and composite wafers. United States.
Weber, Eicke R., Subramanya, Sudhir G., Kim, Yihwan, and Kruger, Joachim. Tue .
"Process for growing epitaxial gallium nitride and composite wafers". United States. https://www.osti.gov/servlets/purl/1174323.
@article{osti_1174323,
title = {Process for growing epitaxial gallium nitride and composite wafers},
author = {Weber, Eicke R. and Subramanya, Sudhir G. and Kim, Yihwan and Kruger, Joachim},
abstractNote = {A novel growth procedure to grow epitaxial Group III metal nitride thin films on lattice-mismatched substrates is proposed. Demonstrated are the quality improvement of epitaxial GaN layers using a pure metallic Ga buffer layer on c-plane sapphire substrate. X-ray rocking curve results indicate that the layers had excellent structural properties. The electron Hall mobility increases to an outstandingly high value of .mu.>400 cm.sup.2 /Vs for an electron background concentration of 4.times.10.sup.17 cm.sup.-3.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue May 13 00:00:00 EDT 2003},
month = {Tue May 13 00:00:00 EDT 2003}
}
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.
Works referenced in this record:
Effect of Si, Mg, and Mg–Zn doping on structural properties of a GaN layer grown by metalorganic chemical vapor deposition
journal, December 2001
- Cho, H. K.; Lee, J. Y.; Kim, K. S.
- Solid-State Electronics, Vol. 45, Issue 12
High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures
journal, July 1995
- Nakamura, Shuji; Senoh, Masayuki; Iwasa, Naruhito
- Japanese Journal of Applied Physics, Vol. 34, Issue Part 2, No. 7A
Paul Ivan Korner 1925–2012
journal, January 2013
- Chalmers, John; Angus, James; Graham, Robert
- Historical Records of Australian Science, Vol. 24, Issue 2
B Vitamins and Fatty Acids: What Do They Share with Small Vessel Disease-Related Dementia?
journal, November 2019
- Moretti, Rita; Peinkhofer, Costanza
- International Journal of Molecular Sciences, Vol. 20, Issue 22
Thermal Annealing Effects on P-Type Mg-Doped GaN Films
journal, February 1992
- Nakamura, Shuji; Mukai, Takashi; Senoh, Masayuki
- Japanese Journal of Applied Physics, Vol. 31, Issue Part 2, No. 2B
The Hitran Molecular Spectroscopic Database and Hawks (Hitran Atmospheric Workstation): 1996 Edition
journal, November 1998
- Rothman, L. S.; Rinsland, C. P.; Goldman, A.
- Journal of Quantitative Spectroscopy and Radiative Transfer, Vol. 60, Issue 5
InN and ln1−XGaX N: calculation of hall mobilities and effects of alloy disorder and dislocation scatterings
journal, August 2012
- Aydogu, Senem; Akarsu, Mustafa; Ozbas, Omer
- Materials Science in Semiconductor Processing, Vol. 15, Issue 4
Atomic Scale Indium Distribution in a G a N / I n 0.43 G a 0.57 N / A l 0.1 G a 0.9 N Quantum Well Structure
journal, November 1997
- Kisielowski, Christian; Liliental-Weber, Zuzanna; Nakamura, Shuji
- Japanese Journal of Applied Physics, Vol. 36, Issue Part 1, No. 11
P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
journal, December 1989
- Amano, Hiroshi; Kito, Masahiro; Hiramatsu, Kazumasa
- Japanese Journal of Applied Physics, Vol. 28, Issue Part 2, No. 12
The working principle of the hollow-anode plasma source
journal, November 1995
- Anders, A.; Anders, S.
- Plasma Sources Science and Technology, Vol. 4, Issue 4
The effect of dielectric heterogeneity on the pyroelectric response of PVDF
journal, January 1998
- Hilczer, B.; Kulek, J.
- IEEE Transactions on Dielectrics and Electrical Insulation, Vol. 5, Issue 1