Method for making photovoltaic devices using oxygenated semiconductor thin film layers
Abstract
A method for making a photovoltaic device is presented. The method includes steps of disposing a window layer on a substrate and disposing an absorber layer on the window layer. Disposing the window layer, the absorber layer, or both layers includes introducing a source material into a deposition zone, wherein the source material comprises oxygen and a constituent of the window layer, of the absorber layer or of both layers. The method further includes step of depositing a film that comprises the constituent and oxygen.
- Inventors:
- Issue Date:
- Research Org.:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1165439
- Patent Number(s):
- 8912037
- Application Number:
- 13/192,545
- Assignee:
- First Solar, Inc. (Tempe, AZ)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- DOE Contract Number:
- AC36-08GO28308
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2011 Jul 28
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 14 SOLAR ENERGY; 36 MATERIALS SCIENCE
Citation Formats
Johnson, James Neil, Albin, David Scott, Feldman-Peabody, Scott, Pavol, Mark Jeffrey, and Gossman, Robert Dwayne. Method for making photovoltaic devices using oxygenated semiconductor thin film layers. United States: N. p., 2014.
Web.
Johnson, James Neil, Albin, David Scott, Feldman-Peabody, Scott, Pavol, Mark Jeffrey, & Gossman, Robert Dwayne. Method for making photovoltaic devices using oxygenated semiconductor thin film layers. United States.
Johnson, James Neil, Albin, David Scott, Feldman-Peabody, Scott, Pavol, Mark Jeffrey, and Gossman, Robert Dwayne. Tue .
"Method for making photovoltaic devices using oxygenated semiconductor thin film layers". United States. https://www.osti.gov/servlets/purl/1165439.
@article{osti_1165439,
title = {Method for making photovoltaic devices using oxygenated semiconductor thin film layers},
author = {Johnson, James Neil and Albin, David Scott and Feldman-Peabody, Scott and Pavol, Mark Jeffrey and Gossman, Robert Dwayne},
abstractNote = {A method for making a photovoltaic device is presented. The method includes steps of disposing a window layer on a substrate and disposing an absorber layer on the window layer. Disposing the window layer, the absorber layer, or both layers includes introducing a source material into a deposition zone, wherein the source material comprises oxygen and a constituent of the window layer, of the absorber layer or of both layers. The method further includes step of depositing a film that comprises the constituent and oxygen.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Dec 16 00:00:00 EST 2014},
month = {Tue Dec 16 00:00:00 EST 2014}
}
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