Amber light-emitting diode comprising a group III-nitride nanowire active region
Abstract
A temperature stable (color and efficiency) III-nitride based amber (585 nm) light-emitting diode is based on a novel hybrid nanowire-planar structure. The arrays of GaN nanowires enable radial InGaN/GaN quantum well LED structures with high indium content and high material quality. The high efficiency and temperature stable direct yellow and red phosphor-free emitters enable high efficiency white LEDs based on the RGYB color-mixing approach.
- Inventors:
- Issue Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1149612
- Patent Number(s):
- 8785905
- Application Number:
- 13/743,438
- Assignee:
- Sandia Corporation (Albuquerque, NM)
- Patent Classifications (CPCs):
-
B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2013 Jan 17
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATION
Citation Formats
Wang, George T., Li, Qiming, Wierer, Jr., Jonathan J., and Koleske, Daniel. Amber light-emitting diode comprising a group III-nitride nanowire active region. United States: N. p., 2014.
Web.
Wang, George T., Li, Qiming, Wierer, Jr., Jonathan J., & Koleske, Daniel. Amber light-emitting diode comprising a group III-nitride nanowire active region. United States.
Wang, George T., Li, Qiming, Wierer, Jr., Jonathan J., and Koleske, Daniel. Tue .
"Amber light-emitting diode comprising a group III-nitride nanowire active region". United States. https://www.osti.gov/servlets/purl/1149612.
@article{osti_1149612,
title = {Amber light-emitting diode comprising a group III-nitride nanowire active region},
author = {Wang, George T. and Li, Qiming and Wierer, Jr., Jonathan J. and Koleske, Daniel},
abstractNote = {A temperature stable (color and efficiency) III-nitride based amber (585 nm) light-emitting diode is based on a novel hybrid nanowire-planar structure. The arrays of GaN nanowires enable radial InGaN/GaN quantum well LED structures with high indium content and high material quality. The high efficiency and temperature stable direct yellow and red phosphor-free emitters enable high efficiency white LEDs based on the RGYB color-mixing approach.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jul 22 00:00:00 EDT 2014},
month = {Tue Jul 22 00:00:00 EDT 2014}
}
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.
Works referenced in this record:
Coalesced nanowire structures with interstitial voids and method for manufacturing the same
patent, January 2013
- Svensson, Patrik
- US Patent Document 8,350,249
Semiconductor devices based on coalesced nano-rod arrays
patent-application, October 2006
- Mishra, Umesh Kumar; Keller, Stacia
- US Patent Application 11/292527; 20060223211
PULSED GROWTH OF CATALYST-FREE GROWITH OF GaN NANOWIRES AND APPLICATION IN GROUP III NITRIDE SEMICONDUCTOR BULK MATERIAL
patent-application, February 2008
- Hersee, Stephen D.; Wang, Xin; Sun, Xinyu
- US Patent Application 11/684264; 20080036038
Nitride nanowires and method of producing such
patent-application, July 2010
- Seifert, Werner; Asoli, Damir; Bi, Zhaoxia
- US Patent Application 12/308249; 20100163840
Nanostructured Device
patent-application, October 2011
- Konsek, Steven Louis; Martynov, Yourii; Ohisson, Jonas
- US Patent Application 13/133371; 20110240959
Nanowired LED Structure and Method for Manufacturing the Same
patent-application, December 2011
- Lowgren, Truls
- US Patent Application 13/163280; 20110309382
Complete composition tunability of InGaN nanowires using a combinatorial approach
journal, October 2007
- Kuykendall, Tevye; Ulrich, Philipp; Aloni, Shaul
- Nature Materials, Vol. 6, Issue 12
Strain influenced indium composition distribution in GaN/InGaN core-shell nanowires
journal, November 2010
- Li, Qiming; Wang, George T.
- Applied Physics Letters, Vol. 97, Issue 18
High-efficiency light-emitting diode with air voids embedded in lateral epitaxially overgrown GaN using a metal mask
journal, January 2011
- Cho, Chu-Young; Kwon, Min-Ki; Park, Il-Kyu
- Optics Express, Vol. 19, Issue S4
GaN-based light emitting diodes with embedded SiO2 pillars and air gap array structures
journal, August 2010
- Lai, Wei-Chih; Yang, Ya-Yu; Peng, Li-Chi
- Applied Physics Letters, Vol. 97, Issue 8
Impact of two-floor air prism arrays as an embedded reflector for enhancing the output power of InGaN/GaN light emitting diodes
journal, November 2009
- Kim, Hyung Gu; Kim, Hyun Kyu; Kim, Hee Yun
- Applied Physics Letters, Vol. 95, Issue 22
Dislocation density reduction in GaN by dislocation filtering through a self-assembled monolayer of silica microspheres
journal, June 2009
- Li, Qiming; Figiel, Jeffrey J.; Wang, George T.
- Applied Physics Letters, Vol. 94, Issue 23
Works referencing / citing this record:
Monolithic image chip for near-to-eye display
patent, April 2017
- Schubert, Martin F.; Thompson, Daniel Bryce; Grundmann, Michael Jason
- US Patent Document 9,620,559
Coalesced nanowire structures with interstitial voids and method for manufacturing the same
patent, February 2017
- Svensson, Patrik; Romano, Linda; Yi, Sungsoo
- US Patent Document 9,570,651