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Title: Photoconductive switch package

Abstract

A photoconductive switch is formed of a substrate that has a central portion of SiC or other photoconductive material and an outer portion of cvd-diamond or other suitable material surrounding the central portion. Conducting electrodes are formed on opposed sides of the substrate, with the electrodes extending beyond the central portion and the edges of the electrodes lying over the outer portion. Thus any high electric fields produced at the edges of the electrodes lie outside of and do not affect the central portion, which is the active switching element. Light is transmitted through the outer portion to the central portion to actuate the switch.

Inventors:
 [1]
  1. rasp, George J
Issue Date:
Research Org.:
Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1107601
Patent Number(s):
8563957
Application Number:
12/775,156
Assignee:
Lawrence Livermore National Security, LLC. (Livermore, CA)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
DOE Contract Number:  
AC52-07NA27344
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Ca. Photoconductive switch package. United States: N. p., 2013. Web.
Ca. Photoconductive switch package. United States.
Ca. Tue . "Photoconductive switch package". United States. https://www.osti.gov/servlets/purl/1107601.
@article{osti_1107601,
title = {Photoconductive switch package},
author = {Ca},
abstractNote = {A photoconductive switch is formed of a substrate that has a central portion of SiC or other photoconductive material and an outer portion of cvd-diamond or other suitable material surrounding the central portion. Conducting electrodes are formed on opposed sides of the substrate, with the electrodes extending beyond the central portion and the edges of the electrodes lying over the outer portion. Thus any high electric fields produced at the edges of the electrodes lie outside of and do not affect the central portion, which is the active switching element. Light is transmitted through the outer portion to the central portion to actuate the switch.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Oct 22 00:00:00 EDT 2013},
month = {Tue Oct 22 00:00:00 EDT 2013}
}

Works referenced in this record:

Optically-Initiated Silicon Carbide High Voltage Switch
patent-application, May 2011


High power photoconductor bulk GaAs switch
patent, July 1991


Optically-initiated silicon carbide high voltage switch
patent, February 2012


System and Method of Modulating Electrical Signals Using Photoconductive Wide Bandgap Semiconductors as Variables Resistors
patent-application, October 2009


Photoconductive switch
patent, July 2001


Photoconductive Switch Package
patent-application, November 2010


Optically initiated silicon carbide high voltage switch
patent, February 2011


Pulse sharpening using an optical pulse
patent, June 1994


Optically Initiated Silicon Carbide High Voltage Switch
patent-application, April 2007