Piezo-phototronic effect devices
Abstract
A semiconducting device includes a piezoelectric structure that has a first end and an opposite second end. A first conductor is in electrical communication with the first end and a second conductor is in electrical communication with the second end so as to form an interface therebetween. A force applying structure is configured to maintain an amount of strain in the piezoelectric member sufficient to generate a desired electrical characteristic in the semiconducting device.
- Inventors:
- Issue Date:
- Research Org.:
- Georgia Institute of Technology, Atlanta, GA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1093230
- Patent Number(s):
- 8530983
- Application Number:
- 13/252,314
- Assignee:
- Georgia Tech Research Corporation (Atlanta, GA)
- Patent Classifications (CPCs):
-
B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- FG02-07ER46394
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2011 Oct 04
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING
Citation Formats
Wang, Zhong L., and Yang, Qing. Piezo-phototronic effect devices. United States: N. p., 2013.
Web.
Wang, Zhong L., & Yang, Qing. Piezo-phototronic effect devices. United States.
Wang, Zhong L., and Yang, Qing. Tue .
"Piezo-phototronic effect devices". United States. https://www.osti.gov/servlets/purl/1093230.
@article{osti_1093230,
title = {Piezo-phototronic effect devices},
author = {Wang, Zhong L. and Yang, Qing},
abstractNote = {A semiconducting device includes a piezoelectric structure that has a first end and an opposite second end. A first conductor is in electrical communication with the first end and a second conductor is in electrical communication with the second end so as to form an interface therebetween. A force applying structure is configured to maintain an amount of strain in the piezoelectric member sufficient to generate a desired electrical characteristic in the semiconducting device.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Sep 10 00:00:00 EDT 2013},
month = {Tue Sep 10 00:00:00 EDT 2013}
}
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