Methods for making thin layers of crystalline materials
Abstract
Methods for making growth templates for the epitaxial growth of compound semiconductors and other materials are provided. The growth templates are thin layers of single-crystalline materials that are themselves grown epitaxially on a substrate that includes a thin layer of sacrificial material. The thin layer of sacrificial material, which creates a coherent strain in the single-crystalline material as it is grown thereon, includes one or more suspended sections and one or more supported sections.
- Inventors:
- Issue Date:
- Research Org.:
- Wisconsin Alumni Research Foundation (Madison, WI)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1088688
- Patent Number(s):
- 8492245
- Application Number:
- 13/367,600
- Assignee:
- Wisconsin Alumni Research Foundation (Madison, WI)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- FG02-03ER46028
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Lagally, Max G, Paskiewicz, Deborah M, and Tanto, Boy. Methods for making thin layers of crystalline materials. United States: N. p., 2013.
Web.
Lagally, Max G, Paskiewicz, Deborah M, & Tanto, Boy. Methods for making thin layers of crystalline materials. United States.
Lagally, Max G, Paskiewicz, Deborah M, and Tanto, Boy. Tue .
"Methods for making thin layers of crystalline materials". United States. https://www.osti.gov/servlets/purl/1088688.
@article{osti_1088688,
title = {Methods for making thin layers of crystalline materials},
author = {Lagally, Max G and Paskiewicz, Deborah M and Tanto, Boy},
abstractNote = {Methods for making growth templates for the epitaxial growth of compound semiconductors and other materials are provided. The growth templates are thin layers of single-crystalline materials that are themselves grown epitaxially on a substrate that includes a thin layer of sacrificial material. The thin layer of sacrificial material, which creates a coherent strain in the single-crystalline material as it is grown thereon, includes one or more suspended sections and one or more supported sections.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jul 23 00:00:00 EDT 2013},
month = {Tue Jul 23 00:00:00 EDT 2013}
}
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