Method of forming contacts for a back-contact solar cell
Abstract
Methods of forming contacts for back-contact solar cells are described. In one embodiment, a method includes forming a thin dielectric layer on a substrate, forming a polysilicon layer on the thin dielectric layer, forming and patterning a solid-state p-type dopant source on the polysilicon layer, forming an n-type dopant source layer over exposed regions of the polysilicon layer and over a plurality of regions of the solid-state p-type dopant source, and heating the substrate to provide a plurality of n-type doped polysilicon regions among a plurality of p-type doped polysilicon regions.
- Inventors:
- Issue Date:
- Research Org.:
- SunPower Corporation (San Jose, CA)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1088686
- Patent Number(s):
- 8492253
- Application Number:
- 12/959,199
- Assignee:
- SunPower Corporation (San Jose, CA)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- DOE Contract Number:
- FC36-07GO17043
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 14 SOLAR ENERGY
Citation Formats
Manning, Jane. Method of forming contacts for a back-contact solar cell. United States: N. p., 2013.
Web.
Manning, Jane. Method of forming contacts for a back-contact solar cell. United States.
Manning, Jane. Tue .
"Method of forming contacts for a back-contact solar cell". United States. https://www.osti.gov/servlets/purl/1088686.
@article{osti_1088686,
title = {Method of forming contacts for a back-contact solar cell},
author = {Manning, Jane},
abstractNote = {Methods of forming contacts for back-contact solar cells are described. In one embodiment, a method includes forming a thin dielectric layer on a substrate, forming a polysilicon layer on the thin dielectric layer, forming and patterning a solid-state p-type dopant source on the polysilicon layer, forming an n-type dopant source layer over exposed regions of the polysilicon layer and over a plurality of regions of the solid-state p-type dopant source, and heating the substrate to provide a plurality of n-type doped polysilicon regions among a plurality of p-type doped polysilicon regions.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jul 23 00:00:00 EDT 2013},
month = {Tue Jul 23 00:00:00 EDT 2013}
}
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