Method for preparing ultraflat, atomically perfect areas on large regions of a crystal surface by heteroepitaxy deposition
Abstract
A novel method of forming large atomically flat areas is described in which a crystalline substrate having a stepped surface is exposed to a vapor of another material to deposit a material onto the substrate, which material under appropriate conditions self arranges to form 3D islands across the substrate surface. These islands are atomically flat at their top surface, and conform to the stepped surface of the substrate below at the island-substrate interface. Thereafter, the deposited materials are etched away, in the etch process the atomically flat surface areas of the islands transferred to the underlying substrate. Thereafter the substrate may be cleaned and annealed to remove any remaining unwanted contaminants, and eliminate any residual defects that may have remained in the substrate surface as a result of pre-existing imperfections of the substrate.
- Inventors:
- Issue Date:
- Research Org.:
- Univ. of California, Oakland, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1083034
- Patent Number(s):
- 8398872
- Application Number:
- 12/921,562
- Assignee:
- The Regents of the University of California (Oakland, CA)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
- DOE Contract Number:
- AC02-05CH11231
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
El Gabaly, Farid, and Schmid, Andreas K. Method for preparing ultraflat, atomically perfect areas on large regions of a crystal surface by heteroepitaxy deposition. United States: N. p., 2013.
Web.
El Gabaly, Farid, & Schmid, Andreas K. Method for preparing ultraflat, atomically perfect areas on large regions of a crystal surface by heteroepitaxy deposition. United States.
El Gabaly, Farid, and Schmid, Andreas K. Tue .
"Method for preparing ultraflat, atomically perfect areas on large regions of a crystal surface by heteroepitaxy deposition". United States. https://www.osti.gov/servlets/purl/1083034.
@article{osti_1083034,
title = {Method for preparing ultraflat, atomically perfect areas on large regions of a crystal surface by heteroepitaxy deposition},
author = {El Gabaly, Farid and Schmid, Andreas K.},
abstractNote = {A novel method of forming large atomically flat areas is described in which a crystalline substrate having a stepped surface is exposed to a vapor of another material to deposit a material onto the substrate, which material under appropriate conditions self arranges to form 3D islands across the substrate surface. These islands are atomically flat at their top surface, and conform to the stepped surface of the substrate below at the island-substrate interface. Thereafter, the deposited materials are etched away, in the etch process the atomically flat surface areas of the islands transferred to the underlying substrate. Thereafter the substrate may be cleaned and annealed to remove any remaining unwanted contaminants, and eliminate any residual defects that may have remained in the substrate surface as a result of pre-existing imperfections of the substrate.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Mar 19 00:00:00 EDT 2013},
month = {Tue Mar 19 00:00:00 EDT 2013}
}
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