Photovoltaic device using single wall carbon nanotubes and method of fabricating the same
Abstract
A photovoltaic device and methods for forming the same. In one embodiment, the photovoltaic device has a silicon substrate, and a film comprising a plurality of single wall carbon nanotubes disposed on the silicon substrate, wherein the plurality of single wall carbon nanotubes forms a plurality of heterojunctions with the silicon in the substrate.
- Inventors:
- Issue Date:
- Research Org.:
- Univ. of Arkansas, Little Rock, AR (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1080444
- Patent Number(s):
- 8304302
- Application Number:
- 12/752,617
- Assignee:
- Board of Trustees of the University of Arkansas (Little Rock, AR)
- Patent Classifications (CPCs):
-
B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- FG 36-06 GO 86072
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2010 Apr 01
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 14 SOLAR ENERGY; 77 NANOSCIENCE AND NANOTECHNOLOGY
Citation Formats
Biris, Alexandru S., and Li, Zhongrui. Photovoltaic device using single wall carbon nanotubes and method of fabricating the same. United States: N. p., 2012.
Web.
Biris, Alexandru S., & Li, Zhongrui. Photovoltaic device using single wall carbon nanotubes and method of fabricating the same. United States.
Biris, Alexandru S., and Li, Zhongrui. Tue .
"Photovoltaic device using single wall carbon nanotubes and method of fabricating the same". United States. https://www.osti.gov/servlets/purl/1080444.
@article{osti_1080444,
title = {Photovoltaic device using single wall carbon nanotubes and method of fabricating the same},
author = {Biris, Alexandru S. and Li, Zhongrui},
abstractNote = {A photovoltaic device and methods for forming the same. In one embodiment, the photovoltaic device has a silicon substrate, and a film comprising a plurality of single wall carbon nanotubes disposed on the silicon substrate, wherein the plurality of single wall carbon nanotubes forms a plurality of heterojunctions with the silicon in the substrate.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Nov 06 00:00:00 EST 2012},
month = {Tue Nov 06 00:00:00 EST 2012}
}
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