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Title: Photovoltaic device using single wall carbon nanotubes and method of fabricating the same

Abstract

A photovoltaic device and methods for forming the same. In one embodiment, the photovoltaic device has a silicon substrate, and a film comprising a plurality of single wall carbon nanotubes disposed on the silicon substrate, wherein the plurality of single wall carbon nanotubes forms a plurality of heterojunctions with the silicon in the substrate.

Inventors:
;
Issue Date:
Research Org.:
Univ. of Arkansas, Little Rock, AR (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1080444
Patent Number(s):
8304302
Application Number:
12/752,617
Assignee:
Board of Trustees of the University of Arkansas (Little Rock, AR)
Patent Classifications (CPCs):
B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
FG 36-06 GO 86072
Resource Type:
Patent
Resource Relation:
Patent File Date: 2010 Apr 01
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 77 NANOSCIENCE AND NANOTECHNOLOGY

Citation Formats

Biris, Alexandru S., and Li, Zhongrui. Photovoltaic device using single wall carbon nanotubes and method of fabricating the same. United States: N. p., 2012. Web.
Biris, Alexandru S., & Li, Zhongrui. Photovoltaic device using single wall carbon nanotubes and method of fabricating the same. United States.
Biris, Alexandru S., and Li, Zhongrui. Tue . "Photovoltaic device using single wall carbon nanotubes and method of fabricating the same". United States. https://www.osti.gov/servlets/purl/1080444.
@article{osti_1080444,
title = {Photovoltaic device using single wall carbon nanotubes and method of fabricating the same},
author = {Biris, Alexandru S. and Li, Zhongrui},
abstractNote = {A photovoltaic device and methods for forming the same. In one embodiment, the photovoltaic device has a silicon substrate, and a film comprising a plurality of single wall carbon nanotubes disposed on the silicon substrate, wherein the plurality of single wall carbon nanotubes forms a plurality of heterojunctions with the silicon in the substrate.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Nov 06 00:00:00 EST 2012},
month = {Tue Nov 06 00:00:00 EST 2012}
}

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