Megavoltage imaging with a photoconductor based sensor
Abstract
A photodetector for detecting megavoltage (MV) radiation comprises a semiconductor conversion layer having a first surface and a second surface disposed opposite the first surface, a first electrode coupled to the first surface, a second electrode coupled to the second surface, and a low density substrate including a detector array coupled to the second electrode opposite the semiconductor conversion layer. The photodetector includes a sufficient thickness of a high density material to create a sufficient number of photoelectrons from incident MV radiation, so that the photoelectrons can be received by the conversion layer and converted to a sufficient of recharge carriers for detection by the detector array.
- Inventors:
-
- Los Altos, CA
- Mountain View, CA
- Issue Date:
- Research Org.:
- Varian Medical Systems, Inc. (Palo Alto, CA)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1015316
- Patent Number(s):
- 7884438
- Application Number:
- US Patent Application 11/193,162
- Assignee:
- Varian Medical Systems, Inc. (Palo Alto, CA)
- Patent Classifications (CPCs):
-
G - PHYSICS G01 - MEASURING G01T - MEASUREMENT OF NUCLEAR OR X-RADIATION
- DOE Contract Number:
- AC05-00OR22800
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 47 OTHER INSTRUMENTATION
Citation Formats
Partain, Larry Dean, and Zentai, George. Megavoltage imaging with a photoconductor based sensor. United States: N. p., 2011.
Web.
Partain, Larry Dean, & Zentai, George. Megavoltage imaging with a photoconductor based sensor. United States.
Partain, Larry Dean, and Zentai, George. Tue .
"Megavoltage imaging with a photoconductor based sensor". United States. https://www.osti.gov/servlets/purl/1015316.
@article{osti_1015316,
title = {Megavoltage imaging with a photoconductor based sensor},
author = {Partain, Larry Dean and Zentai, George},
abstractNote = {A photodetector for detecting megavoltage (MV) radiation comprises a semiconductor conversion layer having a first surface and a second surface disposed opposite the first surface, a first electrode coupled to the first surface, a second electrode coupled to the second surface, and a low density substrate including a detector array coupled to the second electrode opposite the semiconductor conversion layer. The photodetector includes a sufficient thickness of a high density material to create a sufficient number of photoelectrons from incident MV radiation, so that the photoelectrons can be received by the conversion layer and converted to a sufficient of recharge carriers for detection by the detector array.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Feb 08 00:00:00 EST 2011},
month = {Tue Feb 08 00:00:00 EST 2011}
}
Works referenced in this record:
Systematic investigation of the signal properties of polycrystalline HgI 2 detectors under mammographic, radiographic, fluoroscopic and radiotherapy irradiation conditions
journal, June 2005
- Su, Zhong; Antonuk, Larry E.; El-Mohri, Youcef
- Physics in Medicine and Biology, Vol. 50, Issue 12