Plasma-based EUV light source
Abstract
Various mechanisms are provided relating to plasma-based light source that may be used for lithography as well as other applications. For example, a device is disclosed for producing extreme ultraviolet (EUV) light based on a sheared plasma flow. The device can produce a plasma pinch that can last several orders of magnitude longer than what is typically sustained in a Z-pinch, thus enabling the device to provide more power output than what has been hitherto predicted in theory or attained in practice. Such power output may be used in a lithography system for manufacturing integrated circuits, enabling the use of EUV wavelengths on the order of about 13.5 nm. Lastly, the process of manufacturing such a plasma pinch is discussed, where the process includes providing a sheared flow of plasma in order to stabilize it for long periods of time.
- Inventors:
-
- Seattle, WA
- Mountlake Terrace, WA
- Issue Date:
- Research Org.:
- The University of Washington (Seattle, WA)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1014955
- Patent Number(s):
- 7825391
- Application Number:
- US Patent Application 12/101,083
- Assignee:
- The University of Washington (Seattle, WA)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR H05G - X-RAY TECHNIQUE
- DOE Contract Number:
- FG03-98ER54460
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Shumlak, Uri, Golingo, Raymond, and Nelson, Brian A. Plasma-based EUV light source. United States: N. p., 2010.
Web.
Shumlak, Uri, Golingo, Raymond, & Nelson, Brian A. Plasma-based EUV light source. United States.
Shumlak, Uri, Golingo, Raymond, and Nelson, Brian A. Tue .
"Plasma-based EUV light source". United States. https://www.osti.gov/servlets/purl/1014955.
@article{osti_1014955,
title = {Plasma-based EUV light source},
author = {Shumlak, Uri and Golingo, Raymond and Nelson, Brian A},
abstractNote = {Various mechanisms are provided relating to plasma-based light source that may be used for lithography as well as other applications. For example, a device is disclosed for producing extreme ultraviolet (EUV) light based on a sheared plasma flow. The device can produce a plasma pinch that can last several orders of magnitude longer than what is typically sustained in a Z-pinch, thus enabling the device to provide more power output than what has been hitherto predicted in theory or attained in practice. Such power output may be used in a lithography system for manufacturing integrated circuits, enabling the use of EUV wavelengths on the order of about 13.5 nm. Lastly, the process of manufacturing such a plasma pinch is discussed, where the process includes providing a sheared flow of plasma in order to stabilize it for long periods of time.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Nov 02 00:00:00 EDT 2010},
month = {Tue Nov 02 00:00:00 EDT 2010}
}
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