745 K
17 pp.
 
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TitleTheory of High Frequency Rectification by Silicon Crystals
Author(s)Bethe, H. A.
Publication DateOctober 29, 1942
Report NumberRL-184
Unique IdentifierACC0099
Other NumbersOSTI ID: 4415436
Research OrgMIT Radiation Laboratory
Sponsoring OrgUS Atomic Energy Commission (AEC)
SubjectInstruments; Capacitors; Computers; Configuration; Conversion; Crystals; Efficiency; Electric Conductivity; Electronic Equipment; Failures; Frequency; Joints; Microwaves; Rectifiers; Semiconductors; Silicon; Zones
Related Web PagesHans Bethe, Energy Production in Stars, and Nuclear Physics
AbstractThe excellent performance of British "red dot" crystals is explained as due to the knife edge contact against a polished surface. High frequency rectification depends critically on the capacity of the rectifying boundary layer of the crystal, C. For high conversion efficiency, the product of this capacity and of the "forward" (bulk) resistance R {sub b} of the crystal must be small. For a knife edge, this product depends primarily on the breadth of the knife edge and very little upon its length. The contact can therefore have a rather large area which prevents burn-out. For a wavelength of 10 cm. the computations show that the breadth of the knife edge should be less than about 10 {sup -3} cm. For a point contact the radius must be less than 1.5 x 10 {sup -3} cm. and the resulting small area is conducive to burn-out. The effect of "tapping" is probably to reduce the area of contact. (auth)
745 K
17 pp.
 
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