Advanced 0.3-NA EUV lithography capabilities at the ALS

Naulleau, Patrick; Anderson, Erik; Dean, Kim; Denham, Paul; Goldberg, Kenneth A; Hoef, Brian; Jackson, Keith

Title: Advanced 0.3-NA EUV lithography capabilities at the ALS

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Abstract

For volume nanoelectronics production using Extreme ultraviolet (EUV) lithography [1] to become a reality around the year 2011, advanced EUV research tools are required today. Microfield exposure tools have played a vital role in the early development of EUV lithography [2-4] concentrating on numerical apertures (NA) of 0.2 and smaller. Expected to enter production at the 32-nm node with NAs of 0.25, EUV can no longer rely on these early research tools to provide relevant learning. To overcome this problem, a new generation of microfield exposure tools, operating at an NA of 0.3 have been developed [5-8]. Like their predecessors, these tools trade off field size and speed for greatly reduced complexity. One of these tools is implemented at Lawrence Berkeley National Laboratory's Advanced Light Source synchrotron radiation facility. This tool gets around the problem of the intrinsically high coherence of the synchrotron source [9,10] by using an active illuminator scheme [11]. Here we describe recent printing results obtained from the Berkeley EUV exposure tool. Limited by the availability of ultra-high resolution chemically amplified resists, present resolution limits are approximately 32 nm for equal lines and spaces and 27 nm for semi-isolated lines.

Authors:: Naulleau, Patrick; Anderson, Erik; Dean, Kim; Denham, Paul; Goldberg, Kenneth A; Hoef, Brian; Jackson, Keith

Publication Date:: Thu Jul 07 00:00:00 EDT 2005

Research Org.:: Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 901035

Report Number(s):: LBNL-60542
R&D Project: M50034; BnR: 600303000; TRN: US0702437

DOE Contract Number:: DE-AC02-05CH11231

Resource Type:: Conference

Resource Relation:: Conference: National Museum of Emerging Science andInnovation, Tokyo, Japan, 7-8, July, 2005

Country of Publication:: United States

Language:: English

Subject:: 36; ADVANCED LIGHT SOURCE; APERTURES; AVAILABILITY; EDUCATIONAL FACILITIES; LEARNING; PRODUCTION; RESOLUTION; SYNCHROTRON RADIATION; SYNCHROTRONS; VELOCITY

Citation Formats


                    Naulleau, Patrick, Anderson, Erik, Dean, Kim, Denham, Paul, Goldberg, Kenneth A, Hoef, Brian, and Jackson, Keith. Advanced 0.3-NA EUV lithography capabilities at the ALS.  United States: N. p., 2005. 
        Web.

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                    Naulleau, Patrick, Anderson, Erik, Dean, Kim, Denham, Paul, Goldberg, Kenneth A, Hoef, Brian, & Jackson, Keith. Advanced 0.3-NA EUV lithography capabilities at the ALS.  United States.

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                    Naulleau, Patrick, Anderson, Erik, Dean, Kim, Denham, Paul, Goldberg, Kenneth A, Hoef, Brian, and Jackson, Keith. 2005.  
        "Advanced 0.3-NA EUV lithography capabilities at the ALS".  United States.  https://www.osti.gov/servlets/purl/901035.

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@article{osti_901035,

  title        = {Advanced 0.3-NA EUV lithography capabilities at the ALS},

  author       = {Naulleau, Patrick and Anderson, Erik and Dean, Kim and Denham, Paul and Goldberg, Kenneth A and Hoef, Brian and Jackson, Keith},

  abstractNote = {For volume nanoelectronics production using Extreme ultraviolet (EUV) lithography [1] to become a reality around the year 2011, advanced EUV research tools are required today. Microfield exposure tools have played a vital role in the early development of EUV lithography [2-4] concentrating on numerical apertures (NA) of 0.2 and smaller. Expected to enter production at the 32-nm node with NAs of 0.25, EUV can no longer rely on these early research tools to provide relevant learning. To overcome this problem, a new generation of microfield exposure tools, operating at an NA of 0.3 have been developed [5-8]. Like their predecessors, these tools trade off field size and speed for greatly reduced complexity. One of these tools is implemented at Lawrence Berkeley National Laboratory's Advanced Light Source synchrotron radiation facility. This tool gets around the problem of the intrinsically high coherence of the synchrotron source [9,10] by using an active illuminator scheme [11]. Here we describe recent printing results obtained from the Berkeley EUV exposure tool. Limited by the availability of ultra-high resolution chemically amplified resists, present resolution limits are approximately 32 nm for equal lines and spaces and 27 nm for semi-isolated lines.},

  doi          = {},

  url          = {https://www.osti.gov/biblio/901035},
  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {Thu Jul 07 00:00:00 EDT 2005},

  month        = {Thu Jul 07 00:00:00 EDT 2005}

}

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