GaN Electronics For High Power, High Temperature Applications

Conference · Mon Jun 12 00:00:00 EDT 2000

OSTI ID:760777

PEARTON, S J; REN, F; ZHANG, A P; DANG, G; CAO, X A; LEE, K P; CHO, H; GILA, B P; JOHNSON, J W; MONIER, C; ABERNATHY, C R; HAN, JUNG; BACA, ALBERT G; CHYI, J -I; LEE, C -M; NEE, T -E; CHUO, C -C; CHU, S N.G.

A brief review is given of recent progress in fabrication of high voltage GaN and AlGaN rectifiers. GaN/AlGaN heterojunction bipolar transistors and GaN metal-oxide semiconductor field effect transistors. Improvements in epitaxial layer quality and in fabrication techniques have led to significant advances in device performance.

• Research Organization: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sandia National Lab. (SNL-CA), Livermore, CA (United States)
• Sponsoring Organization: US Department of Energy (US)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 760777
• Report Number(s): SAND2000-1467C; TRN: AH200037%%279
• Resource Relation: Conference: European Materials Research Society Meeting, Strasbourg (FR), 06/01/2000; Other Information: PBD: 12 Jun 2000
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
FABRICATION
FIELD EFFECT TRANSISTORS
HETEROJUNCTIONS
PERFORMANCE
RECTIFIERS
GALLIUM NITRIDES
ALUMINIUM NITRIDES
GAN
BIPOLAR TRANSISTORS
MOSFETS