Electron cyclotron resonance microwave ion sources for thin film processing

Conference · Mon Jan 01 00:00:00 EST 1990

OSTI ID:6400525

Berry, L A; Gorbatkin, S M

Plasmas created by microwave absorption at the electron cyclotron resonance (ECR) are increasingly used for a variety of plasma processes, including both etching and deposition. ECR sources efficiently couple energy to electrons and use magnetic confinement to maximize the probability of an electron creating an ion or free radical in pressure regimes where the mean free path for ionization is comparable to the ECR source dimensions. The general operating principles of ECR sources are discussed with special emphasis on their use for thin film etching. Data on source performance during Cl base etching of Si using an ECR system are presented. 32 refs., 5 figs.

• Research Organization: Oak Ridge National Lab., TN (USA)
• Sponsoring Organization: DOE/ER
• DOE Contract Number: AC05-84OR21400
• OSTI ID: 6400525
• Report Number(s): CONF-901116-16; ON: DE91001524; TRN: 91-000051
• Resource Relation: Conference: 11. international conference on the application of accelerators in research and industry, Denton, TX (USA), 5-8 Nov 1990
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
THIN FILMS
ETCHING
ECR HEATING
ION SOURCES
MAGNETIC FIELDS
PLASMA
PLASMATRONS
SILICON
ELECTRON TUBES
ELEMENTS
FILMS
HEATING
HIGH-FREQUENCY HEATING
PLASMA HEATING
SEMIMETALS
SURFACE FINISHING
656003* - Condensed Matter Physics- Interactions between Beams & Condensed Matter- (1987-)
640410 - Fluid Physics- General Fluid Dynamics