Ultrasonic characterization of microwave joined silicon carbide/silicon carbide

Technical Report · Thu May 01 00:00:00 EDT 1997

DOI:https://doi.org/10.2172/319834· OSTI ID:319834

House, M B; Day, P S

High frequency (50--150 MHz), ultrasonic immersion testing has been used to characterize the surface and interfacial joint conditions of microwave bonded, monolithic silicon carbide (SiC) materials. The high resolution ultrasonic C-scan images point to damage accumulation after thermal cycling. Image processing was used to study the effects of the thermal cycling on waveform shape, amplitude and distribution. Such information is useful for concurrently engineering material fabrication processes and suitable nondestructive test procedures.

• Research Organization: Knolls Atomic Power Lab. (KAPL), Niskayuna, NY (United States)
• Sponsoring Organization: USDOE Assistant Secretary for Nuclear Energy, Washington, DC (United States)
• DOE Contract Number: AC12-76SN00052
• OSTI ID: 319834
• Report Number(s): KAPL-P-000157; K-97032; CONF-970568-; ON: DE99001879; TRN: 99:003946
• Resource Relation: Conference: 99. annual meeting of the American Ceramic Society, Cincinnati, OH (United States), 4-7 May 1997; Other Information: PBD: May 1997
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES
JOINING
ULTRASONIC TESTING
SILICON CARBIDES
ADHESIVES
MICROWAVE HEATING
IMAGE PROCESSING
THERMAL CYCLING
EXPERIMENTAL DATA