Nanoengineering for solid-state lighting.
This report summarizes results from a 3-year Laboratory Directed Research and Development project performed in collaboration with researchers at Rensselaer Polytechnic Institute. Our collaborative effort was supported by Sandia's National Institute for Nanoengineering and focused on the study and application of nanoscience and nanoengineering concepts to improve the efficiency of semiconductor light-emitting diodes for solid-state lighting applications. The project explored LED efficiency advances with two primary thrusts: (1) the study of nanoscale InGaN materials properties, particularly nanoscale crystalline defects, and their impact on internal quantum efficiency, and (2) nanoscale engineering of dielectric and metal materials and integration with LED heterostructures for enhanced light extraction efficiency.
|Creator/Author:||Schubert, E. Fred (Rensselaer Polytechnic Institute,Troy, NY) ; Koleske, Daniel David ; Wetzel, Christian (Rensselaer Polytechnic Institute,Troy, NY) ; Lee, Stephen Roger ; Missert, Nancy A. ; Lin, Shawn-Yu (Rensselaer Polytechnic Institute,Troy, NY) ; Crawford, Mary Hagerott ; Fischer, Arthur Joseph|
|Publication Date:||2009 Sep 01|
|OSTI Identifier:||OSTI ID: 973851|
|DOE Contract Number:||AC04-94AL85000|
|Other Number(s):||TRN: US201007%%288|
|Resource Type:||Technical Report|
|Research Org:||Sandia National Laboratories|
|Subject:||36 MATERIALS SCIENCE; DEFECTS; DIELECTRIC MATERIALS; EFFICIENCY; QUANTUM EFFICIENCY|
|Related Subject:||Light emitting diodes.; Solid state lighting; Nanoelectronics.|
|Country of Publication:||United States|
|Format:||Size: 58 p.|
|Update Date:||2010 Jun 03|