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Intermixing of InGaAs/GaAs Quantum Well Using Multiple Cycles Annealing Cu-doped SiO2

Description/Abstract

The authors investigate the effect of intermixing in InGaAs/GaAs quantum well structure using Cu-doped SiO{sub 2}. The incorporation of Cu into the silica film yields larger bandgap shift than typical impurity-free vacancy diffusion (IFVD) method at a lower activation temperature. We also observe enhancement of the photoluminescence (PL) signal from the intermixed InGaAs/GaAs quantum well structure after being cycle-annealed at 850 C.

Creator/Author: Hongpinyo, V ; Ding, Y H ; Dimas, C E ; Wang, Y ; Ooi, B S ; Qiu, W ; Goddard, L L ; Behymer, E M ; Cole, G D ; Bond, T C
Publication Date:2008 Jun 11
OSTI Identifier:OSTI ID: 945531
Report Number(s):LLNL-CONF-404753
DOE Contract Number:W-7405-ENG-48
Other Number(s):TRN: US200903%%624
Resource Type:Conference
Resource Relation:Conference: Presented at: Intermixing of InGaAs/GaAs Quantum Well Using Multiple Cycles Annealing Cu-doped SiO2, IEEE PhotonicsGlobal@Singapore 2008, Singapore, Dec 08 - Dec 11, 2008
Research Org:Lawrence Livermore National Laboratory (LLNL), Livermore, CA
Sponsoring Org:USDOE
Subject:36 MATERIALS SCIENCE; 42 ENGINEERING; ANNEALING; DIFFUSION; PHOTOLUMINESCENCE; QUANTUM WELLS; SILICA
Country of Publication:United States
Language:English
Format: Size: PDF-file: 6 pages; size: 0.4 Mbytes
Update Date:2009 Feb 26

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