| Bibliographic Citation | |
| Full Text | 0 K |
|---|---|
| DOI | 10.2172/777628 |
| Title | Atomic Scale Structure of Ultrathin Magnetic Multilayers and Correlation with Resistance and Giant Magnetoresistance and Spin-Dependent Tunneling |
| Creator/Author | Butler, W.H. |
| Publication Date | 2001 Feb 14 |
| OSTI Identifier | OSTI ID: 777628 |
| Report Number(s) | C/ORNL97-0477 |
| DOE Contract Number | AC05-96OR22464 |
| DOI | 10.2172/777628 |
| Other Number(s) | TRN: AH200118%%16 |
| Resource Type | Technical Report |
| Resource Relation | Other Information: PBD: 14 Feb 2001 |
| Coverage | Final |
| Research Org | Oak Ridge National Lab., TN (US) |
| Sponsoring Org | US Department of Energy (US) |
| Subject | 36 MATERIALS SCIENCE; 42 ENGINEERING; MAGNETIC MATERIALS; MAGNETORESISTANCE; MEMORY DEVICES; MONITORS; PHYSICAL PROPERTIES; CHEMICAL PROPERTIES; MATHEMATICAL MODELS |
| Description/Abstract | ORNL's advanced characterization capabilities were used to determine the physical and chemical structure of magnetic multilayer films intended for application in non-volatile magnetic random access memory devices and as magnetic sensors. ORNL modeling capabilities were used to incorporate this information into a first-principles based tool that can be used to model the magnetic and transport properties of these films. This modeling capability should be useful for understanding and optimizing novel magnetoelectronic devices. |
| Country of Publication | United States |
| Language | English |
| Format | Medium: ED; Size: 6 pages |
| System Entry Date | 2008 Feb 05 |
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