Determination of the strain field from an HREM image of a Si Lomer dislocation. [High-resolution electron microscopy (HREM)]
Description/Abstract
A new approach to quantitative deformation characterization of high-resolution electron microscopy (HREM) defect images has been developed. The principle of this technique, (Computational Fourier Transform Deformation (CFTD)) is to extract an accurate displacement field about a defect from its HREM image using Fourier transformation procedures. The methodology's unique feature is to digitize the defect image and compute the Moire pattern, from which the displacement field is obtained, without the need for an external reference lattice image, normally associated with the interference phenomena. From this data, the displacement gradient can be calculated, which yields much information on the experimental deformation mechanics. One question that has arisen is whether different imaging conditions of the same defect affects the results of the CFM analysis. We have studied this problem by analyzing the strain components of simulated images of a Lomer dislocation in Si and present our findings here.
| Creator/Author: | Tsai, K.H. ; Schwartzman, A.F. ; Gallego, R. ; Ortiz, M. ; Kim, K.S. (Brown Univ., Providence, RI (United States). Div. of Engineering) ; O'Keefe, M.A. (Lawrence Berkeley Lab., CA (United States)) |
|---|---|
| Publication Date: | 1992 Mar 01 |
| OSTI Identifier: | OSTI ID: 7181326; Legacy ID: DE92041176 |
| Report Number(s): | LBL-32129; CONF-920819--23 |
| DOE Contract Number: | AC03-76SF00098 |
| Other Number(s): | Other: ON: DE92041176; CNN: N00014-90-J-1295; DMR-9002994 |
| Resource Type: | Conference |
| Specific Type: | Technical Report |
| Resource Relation: | Conference: Annual meeting of the Electron Microscopy Society (EMS) of America, Boston, MA (United States), 16-21 Aug 1992; Other Information: Extended abstract |
| Research Org: | Lawrence Berkeley Lab., CA (United States) |
| Sponsoring Org: | DOE; DOD; NSF; USDOE, Washington, DC (United States); Department of Defense, Washington, DC (United States); National Science Foundation, Washington, DC (United States) |
| Subject: | 37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; 36 MATERIALS SCIENCE; DEFORMATION; ELECTRON MICROSCOPY; SILICON; DISLOCATIONS; FOURIER TRANSFORMATION; IMAGE PROCESSING; IMAGES; SIMULATION; STRAINS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELEMENTS; INTEGRAL TRANSFORMATIONS; LINE DEFECTS; MICROSCOPY; PROCESSING; SEMIMETALS; TRANSFORMATIONS |
| Country of Publication: | United States |
| Language: | English |
| Format: | Size: Pages: (3 p) |
| Availability: | OSTI; NTIS; GPO Dep. To purchase this media from NTIS, click here |
| Update Date: | 2008 Jun 30 |
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