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DOI 10.2172/555556
Title Giant magnetoresistance materials for magnetic recording technology
Creator/Author Heffner, R.H. ; Adams, C.D. ; Brosha, E.L. [and others]
Publication Date1997 Dec 01
OSTI IdentifierOSTI ID: 555556; Legacy ID: DE98001598
Report Number(s)LA-UR--97-3377
DOE Contract NumberW-7405-ENG-36
DOI10.2172/555556
Other Number(s)Other: ON: DE98001598; TRN: TRN: AHC29802%%135
Resource TypeTechnical Report
Resource RelationOther Information: PBD: [1997]
Research OrgLos Alamos National Lab., NM (United States)
Sponsoring OrgUSDOE Assistant Secretary for Human Resources and Administration, Washington, DC (United States)
Subject36 MATERIALS SCIENCE ;99 MATHEMATICS, COMPUTERS, INFORMATION SCIENCE, MANAGEMENT, LAW, MISCELLANEOUS; LANTHANUM OXIDES; MANGANESE OXIDES; MAGNETORESISTANCE; MAGNETIC STORAGE DEVICES; SYNTHESIS; RESEARCH PROGRAMS; DOPED MATERIALS; PHASE TRANSFORMATIONS; USES; RECORDING SYSTEMS; MEASURING INSTRUMENTS; CARRIER MOBILITY; COMPUTERS; SUPERLATTICES
Description/AbstractThis is the final report of a two-year, Laboratory Directed Research and Development (LDRD) project at Los Alamos National Laboratory (LANL). This work focused on a class of transition-metal-oxide (TMO) materials (LaMnO{sub 3} doped with Ca, Ba, or Sr) that exhibits an insulator-to-metal transition near a ferromagnetic phase transition temperature. This yields a very large magnetoresistance; thus these materials may have important uses as magnetic sensors in a variety of applications, ranging from automobiles to read heads for magnetic storage. In addition, the transport current in the ferromagnetic state is likely to be very highly polarized, which means that additional device applications using the phenomena of spin-polarized tunneling can be envisioned. Use of these materials as magnetic sensors depends upon learning to control the synthesis parameters (principally temperature, pressure and composition) to achieve a specific carrier concentration and/or mobility. A second challenge is the high magnetic fields ({ge}1 Tesla) currently required to achieve a large change in resistance. The authors began an investigation of two novel approaches to this field-sensitivity problem, involving the development of multilayer structures of the TMO materials. Finally, they began to explore the use of epitaxial strain as a means of changing the transport properties in thin-film multilayers.
Country of PublicationUnited States
LanguageEnglish
FormatMedium: P; Size: 11 p.
Availability OSTI as DE98001598
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System Entry Date2008 Feb 05
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