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Active terahertz metamaterials

Description/Abstract

We demonstrate planar terahertz metamaterial devices enabling actively controllable transmission amplitude, phase, or frequency at room temperature via carrier depletion or photoexcitation in the semiconductor substrate or in semiconductor materials incorporated into the metamaterial structure.

DOI 10.1201/9781420054262.ch6
Creator/Author: Chen, Hou-tong [Los Alamos National Laboratory]
Publication Date:2009 Jan 01
OSTI Identifier:OSTI ID: 989773
Report Number(s):LA-UR-09-03369; LA-UR-09-3369
DOE Contract Number:AC52-06NA25396
DOI:10.1201/9781420054262.ch6
Other Number(s):TRN: US201019%%831
Resource Type:Conference
Resource Relation:Conference: Froniter in Optics 2009 ; October 11, 2009 ; San Jose, CA
Research Org:Los Alamos National Laboratory (LANL)
Sponsoring Org:DOE
Subject:36; OPTICS; SEMICONDUCTOR MATERIALS; SUBSTRATES
Country of Publication:United States
Language:English
Update Date:2010 Oct 21

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