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Title The effect of gettering on areal inhomogeneities in large-area multicrystalline-silicon solar cells
Creator/Author Gee, J.M. [Sandia National Labs., Albuquerque, NM (United States)] ; Sopori, B.L. [National Renewable Energy Lab., Golden, CO (United States)]
Publication Date1997 Oct 01
OSTI IdentifierOSTI ID: 541844; Legacy ID: DE98000183
Report Number(s)SAND--97-2124C; CONF-970875--
DOE Contract NumberAC04-94AL85000
Other Number(s)Other: ON: DE98000183; BR: EB2202000; TRN: TRN: AHC29723%%63
Resource TypeConference
Resource RelationConference: 7. workshop on the role of impurities and defects in silicon device processing, Vail, CO (United States), 11-13 Aug 1997; Other Information: PBD: [1997]
Research OrgSandia National Labs., Albuquerque, NM (United States); National Renewable Energy Lab., Golden, CO (United States)
Sponsoring OrgUSDOE Assistant Secretary for Energy Efficiency and Renewable Energy, Washington, DC (United States)
Subject14 SOLAR ENERGY; SILICON SOLAR CELLS; GETTERING; PHOSPHORUS; ALUMINIUM ALLOYS; CRYSTAL GROWTH; CRYSTAL GROWTH METHODS
Description/AbstractMulticrystalline-silicon (mc-Si) materials and cells feature large areal variations in material and junction quality. The regions with poor device quality have been predicted to have more recombination current at forward bias than a simple area-weighted average due to the parallel interconnection of the good and bad regions by the front junction. The authors have examined the effect of gettering on areal inhomogeneities in large-area mc-Si cells. Cells with large areal inhomogeneities were found to have increased non-ideal recombination current, which is in line with theoretical predictions. Phosphorus-diffusion and aluminum-alloy gettering of mc-Si was found to reduce the areal inhomogeneities and improve large-area mc-Si device performance.
Country of PublicationUnited States
LanguageEnglish
FormatMedium: ED; Size: 5 p.
Availability OSTI as DE98000183
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System Entry Date2009 Nov 12
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