Strongly localized donor level in oxygen doped gallium nitride
Description/Abstract
A classification in terms of localization of donor defects in GaN is performed by Raman spectroscopy under large hydrostatic pressure. We observe a significant decrease of free carrier concentration in highly O doped GaN epitaxial films at 22 GPa, indicating the presence of a strongly localized donor defect at large pressure. Monitoring the phonon plasmon coupled mode, we find similarities with results on highly n-type bulk crystals. We refine the model of localized defects in GaN and transfer it to the AlGaN system.
| Creator/Author: | Wetzel, C. ; Suski, T. ; Ager, J.W. III [Lawrence Berkeley National Lab., CA (United States)] ; Fischer, S. ; Meyer, B.K. [Giessen Univ. (Germany). 1. Physikalisches Inst.] ; Grzegory, I. ; Porowski, S. [Polska Akademia Nauk, Warsaw (Poland)] |
|---|---|
| Publication Date: | 1996 Aug 01 |
| OSTI Identifier: | OSTI ID: 434361; Legacy ID: DE97001220 |
| Report Number(s): | LBNL--39218; CONF-960781--8 |
| DOE Contract Number: | AC03-76SF00098 |
| Other Number(s): | Other: ON: DE97001220 |
| Resource Type: | Conference |
| Resource Relation: | Conference: International conference on physics of semiconductors, Berlin (Germany), 21-26 Jul 1996; Other Information: PBD: Aug 1996 |
| Research Org: | Lawrence Berkeley National Lab., CA (United States) |
| Sponsoring Org: | USDOE Office of Energy Research, Washington, DC (United States) |
| Subject: | 36 MATERIALS SCIENCE; GALLIUM NITRIDES; PHYSICAL PROPERTIES; DOPED MATERIALS; CARRIER DENSITY; PRESSURE DEPENDENCE; VERY HIGH PRESSURE; CRYSTAL DEFECTS; ALUMINIUM NITRIDES; OXYGEN ADDITIONS |
| Country of Publication: | United States |
| Language: | English |
| Format: | Size: 8 p. |
| Availability: | OSTI as DE97001220 To purchase this media from NTIS, click here |
| Update Date: | 2009 Nov 10 |
Full Text
4 Mb
View Full Text
or Access Individual Pages
search, view and/or download individual pages
Cite
Select a citation type to copy/paste or download the reference.
