Defects in Photovoltaic Materials and the Origins of Failure to Dope Them: Preprint
Description/Abstract
I will review the basic physical principles underlying the formation energy of various intrinsic defects in common photovoltaic materials. I then use the above principles to explain why doping of semiconductors is, in general, limited and which design principles can be used to circumvent such limits. This work can help design strategies of doping absorber materials as well as explain how TCOs work. Recent results on the surprising stability of polar (112)+ surfaces of CIS will also be described in this context.
| Creator/Author: | Zunger, A. ; Kilic, C. ; Wang, L. |
|---|---|
| Publication Date: | 2002 May 01 |
| OSTI Identifier: | OSTI ID: 15007053 |
| Report Number(s): | NREL/CP-590-32216 |
| DOE Contract Number: | AC36-99-GO10337 |
| Other Number(s): | TRN: US200413%%102 |
| Resource Type: | Conference |
| Resource Relation: | Conference: Conference title not supplied, Conference location not supplied, Conference dates not supplied; Other Information: PBD: 1 May 2002; Related Information: Prepared for the 29th IEEE PV Specialists Conference, 20-24 May |
| Research Org: | National Renewable Energy Lab., Golden, CO. (US) |
| Sponsoring Org: | US Department of Energy (US) |
| Subject: | 14 SOLAR ENERGY; 36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; DEFECTS; DESIGN; STABILITY; SOLAR ENERGY |
| Related Subject: | PV; N-TYPE DOPING; SEMICONDUCTORS; DOPING LIMIT RULE; OXIDES; CONDUCTION BAND MINIMUM; CALCULATED FORMATION ENERGIES; CHALCOPYRITE; DOZINC-BLENDE; SOLAR ENERGY - PHOTOVOLTAICS; SOLID STATE THEORY; MATERIALS SCIENCE AND SEMICONDUCTORS; ELECTRONIC STRUCTURE OF DEFECTS AND IMPURITIES: MAIN-GROUP DEFECTS AND IMPURITIES IN SEMICONDUCTORS; ELECTRONIC STRUCTURE OF SPECIFIC BULK SOLIDS: BINARY SEMICONDUCTORS AND INSULATORS |
| Country of Publication: | United States |
| Language: | English |
| Format: | Size: 7 pages |
| Update Date: | 2008 Feb 12 |
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