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Title Defects in Photovoltaic Materials and the Origins of Failure to Dope Them: Preprint
Creator/Author Zunger, A. ; Kilic, C. ; Wang, L.
Publication Date2002 May 01
OSTI IdentifierOSTI ID: 15007053
Report Number(s)NREL/CP-590-32216
DOE Contract NumberAC36-99-GO10337
Other Number(s)TRN: US200413%%102
Resource TypeConference
Resource RelationConference: Conference title not supplied, Conference location not supplied, Conference dates not supplied; Other Information: PBD: 1 May 2002; Related Information: Prepared for the 29th IEEE PV Specialists Conference, 20-24 May
Research OrgNational Renewable Energy Lab., Golden, CO. (US)
Sponsoring OrgUS Department of Energy (US)
Subject14 SOLAR ENERGY; 36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; DEFECTS; DESIGN; STABILITY; SOLAR ENERGY
Related SubjectPV; N-TYPE DOPING; SEMICONDUCTORS; DOPING LIMIT RULE; OXIDES; CONDUCTION BAND MINIMUM; CALCULATED FORMATION ENERGIES; CHALCOPYRITE; DOZINC-BLENDE; SOLAR ENERGY - PHOTOVOLTAICS; SOLID STATE THEORY; MATERIALS SCIENCE AND SEMICONDUCTORS; ELECTRONIC STRUCTURE OF DEFECTS AND IMPURITIES: MAIN-GROUP DEFECTS AND IMPURITIES IN SEMICONDUCTORS; ELECTRONIC STRUCTURE OF SPECIFIC BULK SOLIDS: BINARY SEMICONDUCTORS AND INSULATORS
Description/AbstractI will review the basic physical principles underlying the formation energy of various intrinsic defects in common photovoltaic materials. I then use the above principles to explain why doping of semiconductors is, in general, limited and which design principles can be used to circumvent such limits. This work can help design strategies of doping absorber materials as well as explain how TCOs work. Recent results on the surprising stability of polar (112)+ surfaces of CIS will also be described in this context.
Country of PublicationUnited States
LanguageEnglish
FormatMedium: ED; Size: 7 pages
System Entry Date2008 Feb 12
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