| Bibliographic Citation | |
| Full Text | |
|---|---|
| Title |
Charged particle detectors based on high quality amorphous silicon deposited with hydrogen or helium dilution of silane loading...
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| Creator/Author | Hong, Wan-Shick ; Drewery, J.S. ; Jing, Tao ; Lee, Hyoung-Koo ; Kaplan, S.N. ; Perez-Mendez, V. [Lawrence Berkeley Lab., CA (United States)] ; Mireshghi, Ali [Sharif Univ. of Technology, Tehran (Iran, Islamic Republic of)] ; Kitsuno, Yu [Chemicals Research Lab., Kawasaki (Japan)] |
| Publication Date | 1994 Nov 01 |
| OSTI Identifier | OSTI ID: 10107687; Legacy ID: DE95004671 |
| Report Number(s) | LBL--36287; CONF-941061--14 |
| DOE Contract Number | AC03-76SF00098 |
| Other Number(s) | Other: ON: DE95004671; TRN: TRN: 95:001218 |
| Resource Type | Conference |
| Specific Type | Technical Report |
| Resource Relation | Conference: Institute of Electrical and Electronic Engineers (IEEE) nuclear science symposium and medical imaging conference,Norfolk, VA (United States),30 Oct - 5 Nov 1994; Other Information: PBD: Nov 1994 |
| Research Org | Lawrence Berkeley Lab., CA (United States) |
| Sponsoring Org | USDOE, Washington, DC (United States) |
| Subject | 46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; SI SEMICONDUCTOR DETECTORS; CHARGE TRANSPORT; FABRICATION; AMORPHOUS STATE; CHEMICAL VAPOR DEPOSITION |
| Description/Abstract | Electrical transport properties of the authors PECVD a-Si:H material has been improved by using hydrogen and/or helium dilution of silane and lower substrate temperature for deposition. For hydrogen-diluted material they have measured electron and hole mobilities {approximately} 4 times larger, and {mu}{tau} values 2-3 times higher than for their standard a-Si:H. The density of ionized dangling bonds (N{sub D}*) also showed a factor of 5-10 improvement. Due to its higher conductivity, the improved a- Si:H material is more suitable than conventional a-Si:H for TFT applications. However, it is difficult to make thick layers by H-dilution because of high internal stress. On the other hand, thick detectors can be made at a faster rate and lower stress by low temperature deposition with He-dilution and subsequent annealing. The internal stress, which causes substrate bending and delamination, was reduced by a factor of 4 to {approximately}90 MPa, while the electronic quality was kept as good as that of the standard material. By this technique 35 {mu}m-thick n-i-p diodes were made without significant substrate bending, and the electronic properties, such as electron mobility and ionized dangling bond density, were suitable for detecting minimum ionizing particles. |
| Country of Publication | United States |
| Language | English |
| Format | Medium: ED; Size: 7 p. |
| Availability | OSTI; NTIS; INIS; GPO Dep. To purchase this media from NTIS, click here |
| System Entry Date | 2009 Dec 11 |
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Last Updated: 06/22/2010