Resonant Inelastic X-ray Scattering Study of the Electronic Structure of Cu2O
A resonant inelastic x-ray scattering study of the electronic structure of the semiconductor cuprous oxide, Cu{sub 2}O, is reported. When the incident x-ray energy is tuned to the CuK-absorption edge, large enhancements of the spectral features corresponding to the electronic transitions between the valence band and the conduction band are observed. A feature at 6.5 eV can be well described by an interband transition from occupied states of mostly Cu3d character to unoccupied states with mixed 3d, 4s, and O2p character. In addition, an insulating band gap is observed, and the momentum dependence of the lower bound is measured along the {Gamma}-R direction. This is found to be in good agreement with the valence-band dispersion measured with angle-resolved photoemission spectroscopy.
- Research Organization:
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Sponsoring Organization:
- Doe - Office Of Science
- DOE Contract Number:
- DE-AC02-98CH10886
- OSTI ID:
- 988776
- Report Number(s):
- BNL-90547-2010-JA; R&D Project: PO-011; KC0202010; TRN: US201019%%133
- Journal Information:
- Physical Review. B, Condensed Matter and Materials Physics, Vol. 81, Issue 19; ISSN 1098-0121
- Country of Publication:
- United States
- Language:
- English
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