Morphology and Optical Properties of Mg Doped GaNNanowires in Dependence of Growth Temperature
The influence of the substrate temperature and Mg doping on the morphological and optical properties of catalyst-free GaN nanowires grown by plasma-assisted molecular beam epitaxy on Si(111) has been investigated in a large temperaturerange between 665 °C and 785 °C. The density and wire sizes in Mg-doped nanowires are found to change with substrate temperature in a similar way as undoped nanowires. Between 725 °C and 785 °C a trimodal size distribution and an increase of the wire density from 5.0x109 cm-2 to 9.5x109 cm-2 were observed. Transmission electron microscopy indicates that the upper parts of the nanowires are free of structural defects. Raman spectroscopy measurements confirm a high crystalline quality of doped wires, with a line width of the E2 H of 3.3 cm-1 for samples grown at Ts=785 °C. Photoluminescence measurements show a strong influence of Mg on the emission properties, namely the increase of thedonor-acceptor pair emission and its phonon replicas.
- Research Organization:
- Brookhaven National Lab. (BNL), Upton, NY (United States). Center for Functional Nanomaterials (CFN)
- Sponsoring Organization:
- Doe - Office Of Science
- DOE Contract Number:
- DE-AC02-98CH10886
- OSTI ID:
- 983868
- Report Number(s):
- BNL-93776-2010-JA; R&D Project: NC-001; KC020401H; TRN: US201014%%1860
- Journal Information:
- Journal of Optoelectronics and Advanced Materials, Vol. 12, Issue 6; ISSN 1454-4164
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
77 NANOSCIENCE AND NANOTECHNOLOGY
99 GENERAL AND MISCELLANEOUS//MATHEMATICS, COMPUTING, AND INFORMATION SCIENCE
BEAMS
DEFECTS
DENSITY
DISTRIBUTION
EMISSION
GROWTH
LINE WIDTHS
MOLECULAR BEAM EPITAXY
MORPHOLOGY
OPTICAL PROPERTIES
PHONONS
PHOTOLUMINESCENCE
RAMAN SPECTROSCOPY
REPLICAS
SIZE
SUBSTRATES
TRANSMISSION ELECTRON MICROSCOPY
WIRES
GaN
MG-doping
Nanowire
MBE
Photo-luminescence
functional nanomaterials