Memory effect of a single-walled carbon nanotube on nitride-oxide structure under various bias conditions.
We report on the memory effect of single-walled carbon nanotubes (SWNTs) placed on a nitride-oxide layer structure designed as a charge storage medium. The conductance of the SWNT was modulated by the injected charge in the nitride-oxide interface and the polarities of injected charges were then detected. A large on/off-state current ratio (>10{sup 4}) was obtained at a small program/erase voltage range (<3 V). We also studied the effect of a half-selected cell on the conductance of the SWNTs to identify the issues with cross-point memory architecture.
- Research Organization:
- Argonne National Lab. (ANL), Argonne, IL (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC); USDOD; US-AFOSR-Korea
- DOE Contract Number:
- DE-AC02-06CH11357
- OSTI ID:
- 971978
- Report Number(s):
- ANL/MSD/JA-65702; APPLAB; TRN: US201005%%98
- Journal Information:
- Appl. Phys. Lett., Vol. 96, Issue Jan. 11, 2010; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- ENGLISH
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