Growth and characterization of highly oriented gadolinia-doped ceria (111) thin films on zirconia (111)/sapphire (0001) substrates
Highly-oriented pure and gadolinia-doped ceria thin films have been grown on pure and ZrO2 (111)-buffered Al2O3 (0001) substrates using oxygen plasma-assisted molecular beam epitaxy (OPA-MBE) to understand the oxygen ionic transport processes in ceria based oxide thin films. Gadolinia-doped ceria films grown on pure Al2O3(0001) substrate show polycrystalline features due to structural deformations resulting from the large lattice mismatch between the Al2O3(0001) substrate and the films. However, the films, grown on a thin layer of ZrO2(111) buffered Al2O3 (0001) substrate, appears to be highly oriented. These films were characterized using high resolution transmission electron microscopy (HRTEM) and x-ray photoelectron spectroscopy (XPS) depth profiling. Oxygen ionic conductivity in gadolinia-doped ceria films was measured as a function of Gd concentration and these results were compared with the ion conductance data of the polycrystalline and single crystalline yttria-stabilized zirconia (YSZ).
- Research Organization:
- Pacific Northwest National Lab. (PNNL), Richland, WA (United States). Environmental Molecular Sciences Lab. (EMSL)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC05-76RL01830
- OSTI ID:
- 939008
- Report Number(s):
- PNNL-SA-54370; THSFAP; 11696; KP1704020; TRN: US200820%%443
- Journal Information:
- Thin Solid Films, 516(18):6088-6094, Vol. 516, Issue 18; ISSN 0040-6090
- Country of Publication:
- United States
- Language:
- English
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