Small d-spacing WSi{sub 2}/Si narrow bandpass multilayers.
To develop narrow-bandpass multilayer monochromators, we have studied small d-spacing WSi{sub 2}/Si multilayers. We found that WSi{sub 2}/Si is an excellent multilayer system for achieving both the desired spectral resolution and peak reflectivity. Compared to other traditional multilayer systems such as W/Si, WSi{sub 2}/Si not only has a lower density and lower absorption, but also is a chemically more stable system, since WSi{sub 2} is already a silicide. One thus expects better thermal stability and sharper interfaces for WSi2/Si multilayers. There are two approaches to achieve high-resolution multilayers: either decrease the d spacing or use low absorption materials. By using WSi{sub 2}/Si, we can utilize both approaches in the same system to achieve good energy resolution and peak reflectivity. Another advantage of this system is that the sputtering rate for Si is much higher than other traditional low-Z materials. Several WSi{sub 2}/Si multilayers have been fabricated at the Advanced Photon Source (APS) deposition lab using dc magnetron sputtering with constant currents of 0.5 A in Ar at a pressure of 2.3 mTorr. A test sample of [9.65 Angstrom-WSi{sub 2}/10.05 Angstrom-Si] x 300 was studied at four institutions: using laboratory x-ray diffractometers with Cu K{alpha} (8.048 keV) wavelength at the APS x-ray lab and at European Synchrotron Radiation Facility (ESRF), and using synchrotron undulator x-rays at 10 keV at MHATT-CAT and at 25 keV at ChemMatCARS-CAT of the APS. The measured first-order reflectivity was 54% with a bandpass of 0.46% at 10 keV and 66% reflectivity with a bandpass of 0.67% at 25 keV of undulator x-rays. Similar results were obtained from Cu K{alpha} x-rays. This result is very attractive for the design of a multilayer monochromator for the ChemMatCARS-CAT to be used in the 20 to 25 keV range. Other small d-spacing multilayers are being studied. Comparison between WSi{sub 2}/Si and W/Si multilayers will be discussed.
- Research Organization:
- Argonne National Lab. (ANL), Argonne, IL (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC); National Science Foundation (NSF)
- DOE Contract Number:
- DE-AC02-06CH11357
- OSTI ID:
- 925183
- Report Number(s):
- ANL/XFD/CP-114168; TRN: US0802363
- Resource Relation:
- Conference: SPIE 49th Annual Meeting; Aug 2-6, 2004; Denver, CO
- Country of Publication:
- United States
- Language:
- ENGLISH
Similar Records
Laterally graded multilayer double-monochromator.
Multilayer growth in the APS rotary deposition system.