Characterization of the synchrotron-based 0.3-NA EUV microexposuretool at the ALS
Synchrotron-based EUV exposure tools continue to play a crucial roll in the development of EUV lithography. Utilizing a programmable-pupil-fill illuminator, the 0.3-NA microexposure tool at Lawrence Berkeley National Laboratory's Advanced Light Source synchrotron radiation facility provides the highest resolution EUV projection printing capabilities available today. This makes it ideal for the characterization of advanced resist and mask processes. The Berkeley tool also serves as a good benchmarking platform for commercial implementations of 0.3-NA EUV microsteppers because its illuminator can be programmed to emulate the coherence conditions of the commercial tools. Here we present the latest resist and tool characterization results from the Berkeley EUV exposure station.
- Research Organization:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Organization:
- USDOE Director. Office of Science. Office of Basic EnergySciences. Materials Sciences and Engineering Division; InternationalSematech
- DOE Contract Number:
- DE-AC02-05CH11231
- OSTI ID:
- 898559
- Report Number(s):
- LBNL-57796; R&D Project: M50033; BnR: 600301010; TRN: US0701677
- Journal Information:
- The Journal of Vacuum Science and Technology, Vol. 23, Issue 6; Related Information: Journal Publication Date: Nov./Dec.2005
- Country of Publication:
- United States
- Language:
- English
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