Formation of cobalt silicide from filter metal vacuum arc deposited films
The thermal reaction of Co film deposited on Si (111) surfaces by a high current filter metal vacuum arc (FMEVAD) system has been studied. After deposition the films were annealed over the 400-900 C temperature range for 30 min. Rutherford Backscattering Spectrometry (RBS) was used to characterize the elemental depth distributions in the films subjected to different annealing temperatures. Ordered chemical phases were determined by glancing-incidence X-ray diffraction (GIXRD) and the morphology was determined by cross section transmission electron microscopy (TEM). The results show that the phases formed are Co2Si at 400 C, CoSi + CoO at 500 C, CoSi + CoSi2 at 600 C, and CoSi2 at (700-800 C). At 900 C, CoSi2 was formed with a mixture of cubic cobalt and probably an amorphous cobalt oxide surface layer. The interface morphology was a rough cusp-like crenellation at 600 C which became less pronounced after annealing at 800 C.
- Research Organization:
- Pacific Northwest National Lab. (PNNL), Richland, WA (United States). Environmental Molecular Sciences Lab. (EMSL)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC05-76RL01830
- OSTI ID:
- 885458
- Report Number(s):
- PNNL-SA-47898; 11596; KP1301030; TRN: US200616%%552
- Journal Information:
- Nuclear Instruments and Methods in Physics Research, Section B, Vol. 247, Issue 2; ISSN 0168-583X
- Country of Publication:
- United States
- Language:
- English
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