Process Of Bonding Copper And Tungsten
- St. Charles, MO
- Manchester, MO
- Ballwin, MO
Process for bonding a copper substrate to a tungsten substrate by providing a thin metallic adhesion promoting film bonded to a tungsten substrate and a functionally graded material (FGM) interlayer bonding the thin metallic adhesion promoting film to the copper substrate. The FGM interlayer is formed by sintering a stack of individual copper and tungsten powder blend layers having progressively higher copper content/tungsten content, by volume, ratio values in successive powder blend layers in a lineal direction extending from the tungsten substrate towards the copper substrate. The resulting copper to tungsten joint well accommodates the difference in the coefficient of thermal expansion of the materials.
- Research Organization:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- DOE Contract Number:
- AC-3013
- Assignee:
- McDonnell Douglas Corporation (St. Louis, MO)
- Patent Number(s):
- US 6089444
- Application Number:
- 08/921581
- OSTI ID:
- 879448
- Country of Publication:
- United States
- Language:
- English
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