Thick film hydrogen sensor

Patent · Sun Jan 01 00:00:00 EST 1995

OSTI ID:870074

Hoffheins, Barbara S ^[1]; Lauf, Robert J ^[2]

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1. Knoxville, TN
2. Oak Ridge, TN

A thick film hydrogen sensor element includes an essentially inert, electrically-insulating substrate having deposited thereon a thick film metallization forming at least two resistors. The metallization is a sintered composition of Pd and a sinterable binder such as glass frit. An essentially inert, electrically insulating, hydrogen impermeable passivation layer covers at least one of the resistors.

• Research Organization: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
• DOE Contract Number: AC05-84OR21400
• Assignee: Martin Marietta Energy Systems, Inc. (Oak Ridge, TN)
• Patent Number(s): US 5451920
• OSTI ID: 870074
• Country of Publication: United States
• Language: English

Related Subjects

thick
film
hydrogen
sensor
element
essentially
inert
electrically-insulating
substrate
deposited
thereon
metallization
forming
resistors
sintered
composition
pd
sinterable
binder
glass
frit
electrically
insulating
impermeable
passivation
layer
covers
sensor element
passivation layer
hydrogen sensor
film hydrogen
essentially inert
thick film
glass frit
electrically insulating
deposited thereon
film metal
insulating substrate
electrically-insulating substrate
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