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Title: Impedance matched, high-power, rf antenna for ion cyclotron resonance heating of a plasma

Patent ·
OSTI ID:866642

A resonant double loop radio frequency (rf) antenna for radiating high-power rf energy into a magnetically confined plasma. An inductive element in the form of a large current strap, forming the radiating element, is connected between two variable capacitors to form a resonant circuit. A real input impedance results from tapping into the resonant circuit along the inductive element, generally near the midpoint thereof. The impedance can be matched to the source impedance by adjusting the separate capacitors for a given tap arrangement or by keeping the two capacitances fixed and adjustng the tap position. This results in a substantial reduction in the voltage and current in the transmission system to the antenna compared to unmatched antennas. Because the complete circuit loop consisting of the two capacitors and the inductive element is resonant, current flows in the same direction along the entire length of the radiating element and is approximately equal in each branch of the circuit. Unidirectional current flow permits excitation of low order poloidal modes which penetrate more deeply into the plasma.

Research Organization:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
Assignee:
United States of America as represented by United States (Washington, DC)
Patent Number(s):
US 4755345
OSTI ID:
866642
Country of Publication:
United States
Language:
English

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