Quantum well multijunction photovoltaic cell
- Albuquerque, NM
A monolithic, quantum well, multilayer photovoltaic cell comprises a p-n junction comprising a p-region on one side and an n-region on the other side, each of which regions comprises a series of at least three semiconductor layers, all p-type in the p-region and all n-type in the n-region; each of said series of layers comprising alternating barrier and quantum well layers, each barrier layer comprising a semiconductor material having a first bandgap and each quantum well layer comprising a semiconductor material having a second bandgap when in bulk thickness which is narrower than said first bandgap, the barrier layers sandwiching each quantum well layer and each quantum well layer being sufficiently thin that the width of its bandgap is between said first and second bandgaps, such that radiation incident on said cell and above an energy determined by the bandgap of the quantum well layers will be absorbed and will produce an electrical potential across said junction.
- Research Organization:
- AT&T
- DOE Contract Number:
- AC04-76DP00789
- Assignee:
- United States of America as represented by Department of Energy (Washington, DC)
- Patent Number(s):
- US 4688068
- OSTI ID:
- 866347
- Country of Publication:
- United States
- Language:
- English
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multijunction
photovoltaic
cell
monolithic
multilayer
comprises
p-n
junction
comprising
p-region
n-region
regions
series
semiconductor
layers
p-type
n-type
alternating
barrier
layer
material
bandgap
bulk
thickness
narrower
sandwiching
sufficiently
width
bandgaps
radiation
incident
energy
determined
absorbed
produce
electrical
potential
multijunction photovoltaic
layer comprising
p-n junction
cell comprises
electrical potential
semiconductor material
semiconductor layer
barrier layer
photovoltaic cell
radiation incident
barrier layers
semiconductor layers
comprising alternating
regions comprise
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