Electron beam enhanced surface modification for making highly resolved structures
- Golden, CO
A method for forming high resolution submicron structures on a substrate is provided by direct writing with a submicron electron beam in a partial pressure of a selected gas phase characterized by the ability to dissociate under the beam into a stable gaseous leaving group and a reactant fragment that combines with the substrate material under beam energy to form at least a surface compound. Variations of the method provide semiconductor device regions on doped silicon substrates, interconnect lines between active sites, three dimensional electronic chip structures, electron beam and optical read mass storage devices that may include color differentiated data areas, and resist areas for use with selective etching techniques.
- Research Organization:
- Midwest Research Institute, Kansas City, MO (United States)
- DOE Contract Number:
- AC02-83CH10093
- Assignee:
- United States of America as represented by United States (Washington, DC)
- Patent Number(s):
- US 4566937
- OSTI ID:
- 865748
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
beam
enhanced
surface
modification
highly
resolved
structures
method
forming
resolution
submicron
substrate
provided
direct
writing
partial
pressure
selected
gas
phase
characterized
ability
dissociate
stable
gaseous
leaving
reactant
fragment
combines
material
energy
form
compound
variations
provide
semiconductor
device
regions
doped
silicon
substrates
interconnect
lines
active
sites
dimensional
electronic
chip
optical
mass
storage
devices
color
differentiated
data
resist
selective
etching
techniques
selective etching
silicon substrates
active sites
surface modification
gas phase
substrate material
storage device
electron beam
silicon substrate
semiconductor device
partial pressure
beam energy
storage devices
doped silicon
method provide
selected gas
stable gaseous
enhanced surface
etching techniques
selective etch
stable gas
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