Microstructure and properties of IN SITU toughened silicon carbide

Journal Article · Thu May 01 00:00:00 EDT 2003 · MICROSTRUCTURAL DESIGN OF ADVANCED MATERIALS: A Commemorative Volume on Professor Gareth Thomas' 70th Birthday

DOI:https://doi.org/10.1016/B978-008044373-7/50041-3· OSTI ID:834628

De Jonghe, Lutgard C; Ritchie, Robert O; Zhang, Xiao Feng

A silicon carbide with a fracture toughness as high as 9.1 MPa.m1/2 has been developed by hot pressing b-SiC powder with aluminum, boron, and carbon additions (ABC-SiC). Central in this material development has been systematic transmission electron microscopy (TEM) and mechanical characterizations. In particular, atomic-resolution electron microscopy and nanoprobe composition quantification were combined in analyzing grain boundary structure and nanoscale structural features.

• Research Organization: Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
• Sponsoring Organization: USDOE Director. Office of Science. Office of Basic Energy Sciences (US)
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 834628
• Report Number(s): LBNL-52628; R&D Project: 512601; TRN: US200433%%250
• Journal Information: MICROSTRUCTURAL DESIGN OF ADVANCED MATERIALS: A Commemorative Volume on Professor Gareth Thomas' 70th Birthday, Vol. 145-56; Other Information: Submitted to MICROSTRUCTURAL DESIGN OF ADVANCED MATERIALS: A Commemorative Volume on Professor Gareth Thomas' 70th Birthday; Journal Publication Date: 2003; PBD: 1 May 2003
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM
BORON
CARBON ADDITIONS
ELECTRON MICROSCOPY
FRACTURE PROPERTIES
HOT PRESSING
MICROSTRUCTURE
SILICON CARBIDES
TRANSMISSION ELECTRON MICROSCOPY