Excess charges in semiconductor nanocrystallites

Conference · Thu Jun 01 00:00:00 EDT 1995

OSTI ID:81063

Laungdilok, C; Lawless, D; Cook, A R; Meisel, D ^[1]

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1. Argonne National Lab., IL (United States). Chemistry Div.

The authors explore in this report the effects of excess electrons on the edge of the absorption spectrum of small semiconductor particles. The presence of these charges leads to strong bleaching of the absorption at the exciton region and to slight enhancement of the absorption on both sides of the bleaching. They show that the effect is independent of the origin of the charge; it occurs whether the charge is injected into the particle or only attached to its surface, and it appears even when the charge is deeply localized within the band gap. They conclude that the effect arises from the electric field associated with the charge and not from its presence in the band.

• Research Organization: Argonne National Lab. (ANL), Argonne, IL (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: W-31109-ENG-38
• OSTI ID: 81063
• Report Number(s): ANL/CHM/CP-85693; CONF-9505228-1; ON: DE95013404; TRN: 95:016408
• Resource Relation: Conference: 48. Society for Imaging Science and Technology (IS&T) annual conference, Washington, DC (United States), 7-12 May 1995; Other Information: PBD: [1995]
• Country of Publication: United States
• Language: English

Related Subjects

40 CHEMISTRY
SEMICONDUCTOR MATERIALS
ABSORPTION SPECTRA
CADMIUM SULFIDES
CHARGE CARRIERS
SPECTRAL SHIFT
HYDRATION
SOLVATED ELECTRONS
CHEMICAL REACTIONS