Large enhancement of boron solubility in silicon due to biaxial stress
One of the important challenges to the semiconductor industry today is to enhance the solid solubility of several dopants, boron in particular, in silicon. We calculate the equilibrium solid solubility of boron in Si from first principles and examine the effect of biaxial stress. We find an unexpectedly large enhancement, on the order of 150 percent, for only 1 percent strain primarily due to the charge of the substitutional boron impurity in Si. We point out that this effect is an intrinsic property of Si and is expected to be important for other dopants as well.
- Research Organization:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Organization:
- USDOE Director, Office of Science. Office of Basic Energy Studies. Materials Science and Engineering Division (US)
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 805157
- Report Number(s):
- LBNL-51638; APPLAB; R&D Project: 506701; B& R KC0202030; TRN: US0301669
- Journal Information:
- Applied Physics Letters, Vol. 80, Issue 25; Other Information: Journal Publication Date: 24 June 2002; PBD: 1 Feb 2002; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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