Formation of Random, RIE-Textured Silicon Surfaces with Reduced Reflection and Enhanced Near IR Absorption
The authors have developed novel metal-assisted texturing processes that have led to optically favorable surfaces for solar cells. Large area ({approximately} 200 cm{sup 2}) uniform texturing has been achieved. The physical dimensions of the chamber limited texturing of even larger wafers. Surface contamination and residual RIE-induced damage were removed by incorporation of a complete RCA clean process followed by wet-chemical etching treatments. RIE-textured solar cells with optimized profiles providing performance comparable to the random, wet-chemically etched cells have been demonstrated. A majority of the texture profiles exhibit an enhanced IQE response in the near IR region.using scanning electron microscope measurements, they carried out a detailed analysis of the microstructure of random RIE-textured surfaces. The random microstructure represents a superposition of sub-{micro}m grating structures with a wide distribution of periods, depths, and profiles as determined by the SEM measurements. These structures were modeled using GSOLVER{trademark} software for periodic patterns. The enhanced IR response from random, RIE-textured surfaces is attributed to enhanced coupling of light into the transmitted diffraction orders. These obliquely propagating diffraction orders generate electron-hole pairs closer to the surface, thus, reducing bulk recombination losses relative to a non-scattering, planar surface with identical hemispherical reflection. The optimized texture and damage removal processes have been applied to large area (100--132 cm{sup 2}) multi-crystalline wafers. initial results have demonstrated improved performance relative to planar, control wafers. However, the texture and solar cell fabrication processes require further optimization in the RCA clean, DRE treatments, and emitter formation in order to fully realize the benefits of the low-reflection ({approximately}1-2%) textured surfaces.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sandia National Lab. (SNL-CA), Livermore, CA (United States)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 780311
- Report Number(s):
- SAND2001-0836; TRN: AH200120%%181
- Resource Relation:
- Other Information: PBD: 1 Apr 2001
- Country of Publication:
- United States
- Language:
- English
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